Fabrication of freestanding heteroepitaxial diamond substrate via micropatterns and microneedles

Abstract

The fabrication of a high-quality freestanding diamond substrate was successfully demonstrated via heteroepitaxy by introducing diamond micropatterns and microneedles in the early stage of growth. Micropatterns contributed to a marked reduction in the number of dislocations induced by epitaxial lateral overgrowth, and microneedles relaxed heteroepitaxial strain. Raman spectroscopy indicated the absence of nondiamond carbon inclusions in the obtained freestanding substrate. The full width at half maximum of the X-ray rocking curve for diamond (004) reflections was 0.07°, the lowest value for heteroepitaxial diamond that has been reported so far. The results provide novel insights toward realizing large-diameter single-crystalline diamond substrates.

Ion bombardment induced buried lateral growth: the key mechanism for the synthesis of single crystal diamond wafers

“…The present ion bombardment occurring during BEN on Ir is significantly harsher – it suppresses vertical crystal growth completely22. As a consequence, lateral surface growth under ion bombardment would never yield the excellent epitaxial alignment of diamond films that is invariably reported by all groups for heteroepitaxy on Ir232425.…”

Chemical vapour deposition diamond single crystals with nitrogen-vacancy centres: a review of material synthesis and technology for quantum sensing applications

“…They also offer the advantage of providing a large and flexible platform for processing them into photonic crystals and resonators that would be highly desirable for QTs [98]. Heteroepitaxial growth on specially developed templates that include a thin monocrystalline iridium layer deposited on an oxide thin film on silicon or a bulk crystal (Yttria stabilized Zr02, a-plane Al2O3 or SrTiO3) is another possible approach that promises wafer-scale deposition area [99][100][101]. In recent years, some important efforts in material development have been devoted to obtaining higher quality and larger films with new venture companies starting to commercialize them (Audiatech, Namiki etc.).…”

Reduction of Dislocations in Single Crystal Diamond by Lateral Growth over a Macroscopic Hole

“…TDs were found to have their Burgers vector along one of the [110] directions and their line either directly following the growth direction ([001]) [18] or inclined with a 45° angle ([101]) [19] Adv. [34,35] Only a few attempts were made to adapt these strategies to diamond and they were mainly restricted to the specific heteroepitaxial growth system of diamond on iridium [36,37] in which dislocation densities can be up to 10 10 cm −2 . 2017, 29,1604823 www.advancedsciencenews.com www.advmat.de a confinement of dislocations in lateral sectors or their termination onto free surfaces.…”