Fabrication of embedded electrodes by reverse offset printing

Kusaka, Yasuyuki; Koutake, Masayoshi; Ushijima, Hirobumi

doi:10.1088/0960-1317/25/4/045017

Cited by 33 publications

(32 citation statements)

References 38 publications

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“…Reverse offset printing is a unique method providing for high-resolution features, submicron in scale. [20][21][22][23] Thus far, we have realized p-type OTFTs with the source and drain electrodes printed using reverse offset printing, whose channel lengths were as short as 0.6 µm, and have exhibited high on/off ratios exceeding 10 8 and channel mobilities of 0.8 cm 2 V −1 s −1 . [22] www.advelectronicmat.de surface, and distinctly shaped edges.…”

Section: Doi: 101002/aelm201700313mentioning

confidence: 99%

Organic Complementary Inverter Circuits Fabricated with Reverse Offset Printing

Takeda

Yoshimura

Shiwaku

et al. 2017

Adv Elect Materials

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OTFT technology has the potential to produce integrated circuits such as microprocessors [24] and amplifier circuits [25] with high mechanical flexibility. In particular, complementary integrated circuits combining both p-type and n-type OTFT devices possess many advantages including low power consumption in steady state operation, full-swing logic circuit output, and high noise margin. For these reasons, realizing complementary integrated circuits using reverse offset printing is highly desired, although the fabrication processes and device structures for them have not been fully established.In this study, we demonstrate organic complementary inverter circuits with a stacked structure using fully printed electrodes formed with reverse offset printing. Reverse offset printing and a silver nanoparticle inks sinterable at low temperature were adopted for the precise patterning of source, drain (S/D), and gate electrodes. The p-type and n-type semiconductor layers were also fabricated from solution, and exhibited effective mobilities of 0.41 and 0.2 cm 2 V −1 s −1 , respectively. The complementary inverter circuits using these OTFTs operated at a low supply voltage of 2.5 V with a gain of 14 and achieved high signal gain up to 25 at supply voltage 10 V.The silver (Ag) electrodes were patterned on a glass substrate using reverse offset printing with the process flow depicted in Figure 1a. There are three main steps in the reverse offset printing process: coating, patterning, and transfer. First, the silver ink was coated on the polydimethylsiloxane blanket with a slit coater (step 1: coating). Next, the unnecessary areas were removed from the blanket with a glass printing plate (step 2: patterning). Finally, the silver ink on the blanket was transferred to the substrate (step 3: transfer). Two kinds of silver nanoparticle inks sinterable at 120 °C were used for the source and drain (RAGT-36, DIC) and gate (RAGT-28, DIC) electrodes. Since the drying time between each step is an important factor for realizing high-resolution patterns, [22] the drying time was optimized for Ag nanoparticles. The thickness of the silver layers was controlled by the coating speed in the Step 1.The surface profile and the patterning resolution of the printed electrodes were evaluated using a stylus-type surface profiler (Dektak XT, Bruker) and an optical microscope. The cross-sectional profile (Figure 1b) indicates that the printed electrodes had uniform thicknesses of 100 nm, a flat top p-Type and n-type organic thin film transistors (OTFTs) and complementary inverter circuits with finely patterned electrodes are fabricated by reverse offset printing. The electrodes achieve a channel length of less than 3 µm under optimized printing conditions. High-performance OTFTs are fabricated using these electrodes and printed p-type and n-type organic semiconductors, each achieving a mobility of 0.2 cm 2 V −1 s −1 at a channel length of 50 µm. A complementary inverter circuit fabricated with a stacked OTFT structure is demonstrated using reverse o...

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Section: Doi: 101002/aelm201700313mentioning

confidence: 99%

Organic Complementary Inverter Circuits Fabricated with Reverse Offset Printing

Takeda

Yoshimura

Shiwaku

et al. 2017

Adv Elect Materials

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“…Reverse‐offset printing enables high‐resolution patterning, high throughput, and scalability with a feature line width and space of 5 µm . This technique can be divided into three parts: first, ink is coated on a silicone blanket (coating step); second, the ink‐coated blanket is pressed softly onto an engraved glass surface to remove unnecessary areas of ink (patterning step); finally, the partially dried ink pattern remaining on the blanket is transferred to a substrate (transfer step) ( Figure a).…”

Section: High‐resolution Printing Technologiesmentioning

confidence: 99%

“…They fabricated top‐gate and bottom‐contact organic TFTs with poly(3‐hexylthiophene) as a polymer semiconducting layer; their TFTs with channel lengths of 5 µm exhibited mobilities of 0.017 cm 2 V −1 s −1 in the saturation region . Ushijima and coworkers also reported organic TFTs with reverse‐offset printed silver source/drain electrodes . They developed a wet‐on‐wet printing process wherein a subsequent layer can be printed on a previous semi‐dried (non‐sintered) layer.…”

Section: High‐resolution Printing Technologiesmentioning

confidence: 99%

Recent Progress in the Development of Printed Thin‐Film Transistors and Circuits with High‐Resolution Printing Technology

2016

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Printed electronics enable the fabrication of large‐scale, low‐cost electronic devices and systems, and thus offer significant possibilities in terms of developing new electronics/optics applications in various fields. Almost all electronic applications require information processing using logic circuits. Hence, realizing the high‐speed operation of logic circuits is also important for printed devices. This report summarizes recent progress in the development of printed thin‐film transistors (TFTs) and integrated circuits in terms of materials, printing technologies, and applications. The first part of this report gives an overview of the development of functional inks such as semiconductors, electrodes, and dielectrics. The second part discusses high‐resolution printing technologies and strategies to enable high‐resolution patterning. The main focus of this report is on obtaining printed electrodes with high‐resolution patterning and the electrical performance of printed TFTs using such printed electrodes. In the final part, some applications of printed electronics are introduced to exemplify their potential.

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“…In this study, we used the cantilever as a capacitive force gauge, so that the bottom electrode was not formed on the substrate. This was achieved through reverse offset printing, using the same nano silver ink used for the micro contact printing [16]. A photoresist (Nippon Kayaku, SU-8 25) was used to form an insulator step beside the bottom electrode.…”

Section: Preparation Of the Substrate With A Step And A Bottom Electrodementioning

confidence: 99%

Improved Transfer Process for the Fully Additive Manufacturing of a Conductive Layer-Stacked Polymeric Cantilever

Kanazawa¹,

Kusaka²,

Yamamoto³

et al. 2019

MSA

Self Cite

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This paper reports on an efficient fabrication process for a polymeric cantilever covered with conductive nano silver. The entire structure can be constructed additively using a printing process, without the use of an etching process or a sacrificial layer. The fabricated cantilever exhibits good linearity and forms a submillimeter-ordered air gap between itself and the substrate surface. Fine operation of a capacitive force gauge was obtained using the capacitance between the conductive cantilever and an electrode on the substrate. This process is expected to make possible the efficient manufacturing of various types of sensors that measure mechanical strain in a cantilever structure.

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Fabrication of embedded electrodes by reverse offset printing

Cited by 33 publications

References 38 publications

Organic Complementary Inverter Circuits Fabricated with Reverse Offset Printing

Organic Complementary Inverter Circuits Fabricated with Reverse Offset Printing

Recent Progress in the Development of Printed Thin‐Film Transistors and Circuits with High‐Resolution Printing Technology

Improved Transfer Process for the Fully Additive Manufacturing of a Conductive Layer-Stacked Polymeric Cantilever

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