Fabrication of Einzel Lens Array with One-Mask Reactive Ion Etching Process for Electron Micro-Optics

Miyashita, Hidetoshi; Tomono, Eiichi; Kawai, Yusuke; Toda, Masaya; Esashi, Masayoshi; Ono, Takahito

doi:10.7567/jjap.50.106503

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Ion Trajectories In High-aspect Ratio Etching1

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2017

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“…120,121) The actual fabrication of high-aspect-ratio Si structures by this method was reported. [122][123][124][125] Chemical dry etching technologies based on fluorine etching reactions in NO and F 2 mixtures were found to be highly dependent on the wafer temperature. 126,127) Therefore, the wafer temperature was identified as an important factor in controlling surface reactions during plasma processing.…”

Section: Ion Trajectories In High-aspect Ratio Etchingmentioning

confidence: 99%

Progress and prospects in nanoscale dry processes: How can we control atomic layer reactions?

Ishikawa

Karahashi

Ichikı

et al. 2017

Jpn. J. Appl. Phys.

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In this review, we discuss the progress of emerging dry processes for nanoscale fabrication. Experts in the fields of plasma processing have contributed to addressing the increasingly challenging demands in achieving atomic-level control of material selectivity and physicochemical reactions involving ion bombardment. The discussion encompasses major challenges shared across the plasma science and technology community. Focus is placed on advances in the development of fabrication technologies for emerging materials, especially metallic and intermetallic compounds and multiferroic, and two-dimensional (2D) materials, as well as state-of-the-art techniques used in nanoscale semiconductor manufacturing with a brief summary of future challenges.

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