2016
DOI: 10.1016/j.tsf.2016.03.021
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Fabrication of Cu2ZnSnSe4 solar cells through multi-step selenization of layered metallic precursor film

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Cited by 10 publications
(8 citation statements)
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“…25-1288). Along with these two phases, the characteristic peaks of Sn were also found at 30.71°, 32.10°, 43.95°, and The 600 nm thick Sn/Zn/Cu (CZT) multimetallic stacked precursors were sputteringdeposited on our Mo-SLGs with or without MoO 3 layers [11,35]. The X-ray diffraction (XRD) of metal stacked precursors on Mo-SLGs (in Figure 2) showed two characteristic peaks of well-intermixed metal alloys at 30.26 • , corresponding to bronze (Cu 6 Sn 5 JCPDS no.…”
Section: Resultsmentioning
confidence: 89%
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“…25-1288). Along with these two phases, the characteristic peaks of Sn were also found at 30.71°, 32.10°, 43.95°, and The 600 nm thick Sn/Zn/Cu (CZT) multimetallic stacked precursors were sputteringdeposited on our Mo-SLGs with or without MoO 3 layers [11,35]. The X-ray diffraction (XRD) of metal stacked precursors on Mo-SLGs (in Figure 2) showed two characteristic peaks of well-intermixed metal alloys at 30.26 • , corresponding to bronze (Cu 6 Sn 5 JCPDS no.…”
Section: Resultsmentioning
confidence: 89%
“…Moreover, the ultrathin MoO3 layers can be prepared by the reactive sputtering of 1 μm thick Mo on SLGs, which is compatible with the subsequent fabrication for CIGSSe solar cells [34]. The 600 nm thick Sn/Zn/Cu (CZT) multimetallic stacked precursors were sputteringdeposited on our Mo-SLGs with or without MoO3 layers [11,35]. The X-ray diffraction (XRD) of metal stacked precursors on Mo-SLGs (in Figure 2) showed two characteristic peaks of well-intermixed metal alloys at 30.26°, corresponding to bronze (Cu6Sn5 JCPDS no.…”
Section: Resultsmentioning
confidence: 99%
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“…During the process, the chamber was filled with Ar gas and the vacuum was maintained at 1.07 Pa. A CZTSSe absorption layer was formed using the metallic precursors and a rapid thermal annealing process. These metallic precursors were slowly heated in a graphite box and maintained at 300 °C for 10 min to form a well-intermixed metal alloy . After that, it was cooled at room temperature and quickly heated to 520 °C for 10 min with 50 mg of Se and 2 mg of S powders.…”
Section: Methodsmentioning
confidence: 99%
“…These metallic precursors were slowly heated in a graphite box and maintained at 300 °C for 10 min to form a well-intermixed metal alloy. 30 After that, it was cooled at room temperature and quickly heated to 520 °C for 10 min with 50 mg of Se and 2 mg of S powders. To eliminate secondary phases, the CZTSSe thin films were immersed in 0.05 M aqueous KCN solution for 5 min and washed with deionized water.…”
Section: Methodsmentioning
confidence: 99%