Fabrication of Cu2SnS3 thin film solar cells using pulsed laser deposition technique

Vanalakar, S.A.; Agawane, G.L.; Kamble, A. S.; Hong, Chul−Un; Patil, P. S.; Kim, J.H.

doi:10.1016/j.solmat.2015.02.031

Cited by 107 publications

(33 citation statements)

References 33 publications

(49 reference statements)

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“…However, the lower V oc and FF are the main issues for poor conversion efficiency. Compared with the fairly prominent R s , the lower shunt resistance (R sh ) indicates the existence of a shunt path inside the films which causes the decrement in the V oc and leads to the recombination of charge carriers at deep traps in the band gap[26]. Low R sh and poor FF suggests the incomplete p-n junction and eventually the poor junction causes the numerous recombination at the CTS/CdS interface[27].…”

mentioning

confidence: 99%

Influence of annealing temperature on the properties and solar cell performance of Cu2SnS3 (CTS) thin film prepared using sputtering method

Kim

Lee

Ghorpade

et al. 2016

Journal of Alloys and Compounds

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mentioning

confidence: 99%

Influence of annealing temperature on the properties and solar cell performance of Cu2SnS3 (CTS) thin film prepared using sputtering method

Kim

Lee

Ghorpade

et al. 2016

Journal of Alloys and Compounds

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“…This cell achieved a rather low efficiency of 1.74% [85]. In 2015, the first Cu 2 SnS 3 (CTS) thin film was produced by PLD [86,87]. Some achievements of both CZTS and CTS thin films growth can be found in review articles by Sulaiman et al [88] and Vanalakar et al [89].…”

Section: Pulsed Laser Depositionmentioning

confidence: 99%

Physical routes for the synthesis of kesterite

et al. 2019

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This paper provides an overview of the physical vapor technologies used to synthesize Cu 2 ZnSn(S,Se) 4 thin films as absorber layers for photovoltaic applications. Through the years, CZT(S,Se) thin films have been fabricated using sequential stacking or co-sputtering of precursors as well as using sequential or co-evaporation of elemental sources, leading to high-efficient solar cells. In addition, pulsed laser deposition of composite targets and monograin growth by the molten salt method were developed as alternative methods for kesterite layers deposition. This review presents the growing increase of the kesterite-based solar cell efficiencies achieved over the recent years. A historical description of the main issues limiting this efficiency and of the experimental pathways designed to prevent or limit these issues is provided and discussed as well. A final section is dedicated to the description of promising process steps aiming at further improvements of solar cell efficiency, such as alkali doping and bandgap grading. intensive research on Cu 2 ZnSn(S,Se) 4 (CZT(S,Se)) kesterite compounds as CRM-free absorber layers for PV applications is essential. This article aims at establishing a complete overview of the physical routes used for the synthesis of kesterite thin films as absorber layers in solar cells. The following sections are devoted to that objective and will take on the main issues which have been raised so far as well as how the processes have evolved through the years to meet the requirements of the market. Some major advancements in terms of deposition or post-deposition treatments are introduced. Advantages and drawbacks of each of the physical methods presented in this review are described in detail and compared to other physical or chemical synthesis routes. Physical routes: status overviewWe performed an extensive identification of the common processes and methods used for the synthesis of kesterite thin films or for the design of solar cell devices. In order to avoid unnecessary repetitions along this paper, this section first explains these well-known and commonly used experimental processes and methods. Historically, based on the similarities between kesterite and chalcopyrite compounds, the standard device structure adopted for Cu(In,Ga)(S,Se) 2 (CIGSSe) was directly extended to CZTSSe, by simply replacing the CIGSSe absorber layer with a p-type CZTSSe thin film. CZTSSe solar cells are then typically produced using a soda-lime glass (SLG) substrate coated with a sputtered Mo layer acting as rear metallic contact. Typical sputter-deposited Mo layer thickness is around 500 nm up to 1 μm [12]. The kesterite absorber is then deposited onto the Mo layer.The fabrication of this absorber consists in the deposition of a precursor layer via a physical or a chemical route, which is then annealed in a reactive atmosphere containing either S (sulfurization) or Se (selenization). As a common result of the reactive annealing, a thin Mo(S,Se) 2 layer is naturally formed at the CZTSSe/Mo interface, betw...

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“…CTS thin films have also, more recently, been fabricated by pulsed laser deposition (PLD) [8]. Vanalakar et al [9] have reported on the first CTS solar cell prepared by pulsed laser deposition with an efficiency of 0.82%.…”

Section: Introductionmentioning

confidence: 99%

“…The presence of droplets (in some papers called particulates) in the growing films is a well-known problem, which can be addressed in a number of ways [11]. Particularly, droplets up to 1 micron in diameter or larger were observed in the films of CTS deposited by PLD [8,9]. The influence of droplets on the overall efficiency of the solar cell is not well understood, but it is clear that it can be detrimental for the cell performance for the following reasons: i) the droplet size can be larger than the overall thickness of the absorber layer, resulting in a rough interface and possible shunt paths between the CTS film and subsequent solar cell layers [12]; and ii) the droplets can have a different composition than the matrix of the CTS film [13,14], resulting in non-homogeneity in composition and therefore different charge carrier transport properties.…”

Section: Introductionmentioning

confidence: 99%

Formation of copper tin sulfide films by pulsed laser deposition at 248 and 355 nm

et al. 2016

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The influence of the laser wavelength on the deposition of copper tin sulfide (CTS) and SnS-rich CTS with a 248-nm KrF excimer laser (pulse length τ=20 ns) and a 355-nm frequency-tripled Nd:YAG laser (τ=6 ns) was investigated. A comparative study of the two UV wavelengths shows that the film growth rate per pulse of CTS was three to four times lower with the 248 nm laser than the 355 nm laser. SnSrich CTS is more efficiently ablated than pure CTS. Films deposited at high fluence have sub-micron and micrometer size droplets, and their size and area density do not vary significantly from 248 to 355 nm deposition. Irradiation at low fluence resulted in a non-stoichiometric material transfer with significant Cu-deficiency in the as-deposited films. We discuss the transition from a non-stoichiometric material transfer at low fluence to a nearly stoichiometric ablation at high fluence based on a transition from a dominant evaporation regime to an ablation regime.

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Fabrication of Cu2SnS3 thin film solar cells using pulsed laser deposition technique

Cited by 107 publications

References 33 publications

Influence of annealing temperature on the properties and solar cell performance of Cu2SnS3 (CTS) thin film prepared using sputtering method

Influence of annealing temperature on the properties and solar cell performance of Cu2SnS3 (CTS) thin film prepared using sputtering method

Physical routes for the synthesis of kesterite

Formation of copper tin sulfide films by pulsed laser deposition at 248 and 355 nm

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