2018
DOI: 10.1016/j.apt.2018.09.024
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Fabrication of controlled expansion Al-Si composites by pressureless and spark plasma sintering

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Cited by 26 publications
(4 citation statements)
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“…The DSC chart showed three phase transitions of the coated steel sheet within the measured temperature range from 700 K and 1150 K (Figure 4a). The first endothermic peak at 845 K upon heating was attributed to the melting of eutectic Al-Si phase, and the second peak at 882 K indicated the melting of α(Al) phase according to the Al-Si binary phase diagram [41]. The third peak at 1014 K corresponded to the austenitization of boron steel [42], which was consistent with the dilatometric data ( Figure 4b).…”
Section: Al-si Coatingsupporting
confidence: 86%
“…The DSC chart showed three phase transitions of the coated steel sheet within the measured temperature range from 700 K and 1150 K (Figure 4a). The first endothermic peak at 845 K upon heating was attributed to the melting of eutectic Al-Si phase, and the second peak at 882 K indicated the melting of α(Al) phase according to the Al-Si binary phase diagram [41]. The third peak at 1014 K corresponded to the austenitization of boron steel [42], which was consistent with the dilatometric data ( Figure 4b).…”
Section: Al-si Coatingsupporting
confidence: 86%
“…In Taguchi's multifactor orthogonal experimental design, the orthogonal array serves as the foundation [18][19][20]. It is easy to pick sample points that are equally dispersed across the whole factor test for optimum results in multifactor research.…”
Section: Introductionmentioning
confidence: 99%
“…Recently, it was demonstrated that electric current activated sintering (ECAS), commonly known as spark plasma sintering (SPS), has the ability to produce a characteristic eutectic free microstructure in hypereutectic Al− Si alloys for electronic packaging applications. 11,12 However, in electronic device packages, these high thermal conductive hypereutectic Al−Si will be joined to an electrically insulating substrate such as alumina ceramics or a lightweight chassis such as aluminum alloys depending upon the functionality.…”
Section: ■ Introductionmentioning
confidence: 99%
“…To improve the mechanical behavior of hypereutectic Al–Si, the equilibrium acicular eutectic Si structure needs to be modified to be finer in size and possibly globular in shape. , Al–Si alloys potentially cannot replace the existing electronic packaging materials without refinement in characteristic acicular eutectic structure. Recently, it was demonstrated that electric current activated sintering (ECAS), commonly known as spark plasma sintering (SPS), has the ability to produce a characteristic eutectic free microstructure in hypereutectic Al–Si alloys for electronic packaging applications. , However, in electronic device packages, these high thermal conductive hypereutectic Al–Si will be joined to an electrically insulating substrate such as alumina ceramics or a lightweight chassis such as aluminum alloys depending upon the functionality. The conventional joining processes adopted in the electronic industry such as brazing and soldering results in contamination of devices due to the fluxes used .…”
Section: Introductionmentioning
confidence: 99%