Fabrication of charge‐pump active‐matrix OLED display panel with 64 × 64 pixels

Abstract

Organic light-emitting diode (OLED) display panel using the charge-pump (CP) pixel addressing scheme was fabricated, and the results show that it is applicable for information display. A CP-OLED panel with 64 × 64 pixels consisting of thinfilm capacitors and amorphous silicon Schottky diodes was fabricated using conventional thin-film processes. The pixel drive circuit passes electrical current into the OLED cell during most of the frame period as in the thin-film transistor (TFT)-based active-matrix (AM) OLED displays. In this study, the panel was operated at a voltage level of below 4 V, and this operation voltage can be reduced by eliminating the overlap capacitance between the column bus line and the common electrode.

Threshold Voltage and IR Drop Compensation of an AMOLED Pixel Circuit Without a $V_{\rm DD}$ Line

“…Low-temperature polycrystallinesilicon (LTPS) thin-film transistors (TFTs) are commonly used in AMOLED displays because they can allow high current flow because of their higher mobility than that of amorphous silicon (a-Si) TFTs [1], [2].…”

Pixel Circuit with Threshold Voltage Compensation using a-IGZO TFT for AMOLED

“…Hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs) and lowtemperature polycrystalline-silicon (LTPS) TFTs are used widely at the backplanes of displays because of their low fabrication cost in the case of the a-Si:H TFTs, and high mobility and stability in LTPS TFTs, respectively [2][3][4]. Although both backplane technologies are used widely, the threshold voltage of a-Si:H TFTs shifts seriously from their initial value as a result of the electrical stress caused by charge trapping and dangling bond creation.…”