Fabrication of Cdznte Strip Detectors for Large Area Arrays

Stahle, C. M.; Shi, Zhiqing; Hu, Kelley; Barthelmy, S. D.; Snodgrass, Steve; Lehtonen, S. J.; Mach, K. J.; Barbier, L.; Gehrels, N.; Krizmanic, John F.; Palmer, D. M.; Parsons, A.; Shu, P.

doi:10.1557/proc-484-285

Cited by 3 publications

(2 citation statements)

References 5 publications

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“…However, there are a number of difficulties in fabricating a diode-type detector as CdTe crystals are vulnerable to high temperature processing and crystal property deteriorates if it is subjected to high temperature without some precaution [10]. Moreover, detectors should be fabricated in the form of minute strips or pixels to improve their spatial resolution, a criterion necessary for imaging detectors [11]- [14].…”

Section: Introductionmentioning

confidence: 99%

Diode-type CdTe strip and linear array detectors for gamma-ray detection and imaging

Niraula

Nakamura

Aoki

et al. 2002

IEEE Trans. Nucl. Sci.

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Diode-type CdTe detectors were fabricated in two different approaches for gamma-ray detection and imaging applications. The first type is a monolithic one-dimensional (1-D) detector with segmented n-type strips formed on the p-like CdTe crystal wafer. N-type strips were formed by diffusing indium using an excimer laser annealing process. In another approach, single element diode-type detectors were fabricated by growing an iodine-doped epitaxial layer on the p-like CdTe crystal in a metalorganic chemical vapor deposition system working at a low substrate temperature. A 1-D linear array detector was then developed by mounting a number of such small element detectors in a row. Both types of detectors exhibited good diode-like property with suppressed leakage currents in the reverse bias direction, which enabled us to apply a high electric field on the detectors in order to improve their performance. Nuclear detection tests performed at room temperature using 57 Co and 241 Am radioisotopes showed improved and uniform spectral responses from both types of detectors. Details about the detector fabrication and the spectral results that demonstrate the imaging and spectroscopy capabilities of these detectors are presented.

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Section: Introductionmentioning

confidence: 99%

Diode-type CdTe strip and linear array detectors for gamma-ray detection and imaging

Niraula

Nakamura

Aoki

et al. 2002

IEEE Trans. Nucl. Sci.

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“…As this is precisely the geometry required for a position-sensitive detector, pixellated arrays of CdZnTe for X-ray astronomy have enjoyed intense scrutiny in recent years. 3,4,5 Our work in particular has been motivated by the need for a large-area hard X-ray survey telescope, such as the Energetic X-ray Imaging Survey Telescope (EXIST or EXIST-LITE) concept, 6,7 designed to be sensitive between 20 and 600 keV. Thus we have focused our study on relatively thick (5 mm) CdZnTe detectors fashioned with various types of pixellated arrays, and with these devices we have measured a typical energy resolution of ∼ 4% at 60 keV.…”

Section: Introductionmentioning

confidence: 99%

<title>CdZnTe background measurement at balloon altitudes with an active BGO shield</title>

Bloser¹,

Grindlay

Narita

et al. 1998

EUV, X-Ray, and Gamma-Ray Instrumentation for Astronomy IX

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We report results of an experiment conducted in May 1997 to measure CdZnTe background and background reduction schemes in space flight conditions similar to those of proposed hard X-ray astrophysics missions. A 1 cm 2 CdZnTe detector was placed adjacent to a thick BGO anticoincidence shield and flown piggybacked onto the EXITE2 scientific balloon payload. The planar shield was designed to veto background counts produced by local gamma-ray production in passive material and neutron interactions in the detector. The CdZnTe and BGO were partially surrounded by a Pb-Sn-Cu shield to approximate the grammage of an X-ray collimator, although the field of view was still ∼ 2π sr. At an altitude of 127000 feet we find a reduction in background by a factor of 6 at 100 keV. The non-vetoed background is 9 × 10 −4 cts cm −2 s −1 keV −1 at 100 keV, about a factor of 2 higher than that of the collimated (4.5 • FWHM) EXITE2 phoswich detector. We compare our recorded spectrum with that expected from simulations using GEANT and find agreement within a factor of 2 between 30 and 300 keV. We also compare our results with those of previous experiments using passive lead and active NaI shields, and discuss possible active shielding schemes in future astronomy missions employing large arrays of CdZnTe detectors.

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Electric field mapping by Pockels effect and I(V) characteristic of CdTe nuclear detectors by different Pt contact deposition

Lmai,

Elouafi,

Chafi

et al. 2024

Materials Today: Proceedings

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Fabrication of Cdznte Strip Detectors for Large Area Arrays

Cited by 3 publications

References 5 publications

Diode-type CdTe strip and linear array detectors for gamma-ray detection and imaging

Diode-type CdTe strip and linear array detectors for gamma-ray detection and imaging

<title>CdZnTe background measurement at balloon altitudes with an active BGO shield</title>

Electric field mapping by Pockels effect and I(V) characteristic of CdTe nuclear detectors by different Pt contact deposition

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