Fabrication of CaLa4(Zr0.05Ti0.95)4O15 thin films by RF magnetron sputtering

Hsu, Cheng‐Hsing; Chang, Chen‐Chi

doi:10.1016/j.ceramint.2015.12.113

Cited by 2 publications

(1 citation statement)

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“…24) However, the dielectric and electrical characteristics of CaLa 4 (Zr 0.05 Ti 0.95 ) 4 O 15 thin film fabricated by RF magnetron sputtering have not yet been clearly discussed. 25) In this study, the properties of the CaLa 4 (Zr 0.05 Ti 0.95 ) 4 O 15 thin films on n-type silicon substrate were investigated at different RF powers (200-300 W) and substrate temperatures (150-300 °C). The effects of the RF power and substrate temperature on the crystal structure and dielectric properties of CaLa 4 (Zr 0.05 Ti 0.95 ) 4 O 15 films were also discussed.…”

Section: Introductionmentioning

confidence: 99%

Properties of CaLa₄(Zr_0.05Ti_0.95)₄O₁₅ thin films by RF magnetron sputtering

Hsu

Liu

Tseng

et al. 2016

Jpn. J. Appl. Phys.

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CaLa4(Zr0.05Ti0.95)4O15 thin films deposited on n-type Si(100) substrates at different substrate temperatures and radio-frequency (RF) powers were investigated. The structural and morphological characteristics analyzed by X-ray diffraction (XRD), atomic force microscopy (AFM), and scanning electron microscopy (SEM) were found to be affected by substrate temperature (150–300 °C) and RF power (200–300 W). Highly oriented CaLa4(Zr0.05Ti0.95)4O15 (110) perpendicular to the substrate surface was identified for all of the deposition conditions. The XRD showed that the deposited films exhibited a polycrystalline microstructure. As the RF power and substrate temperature increased, the quality of the CaLa4(Zr0.05Ti0.95)4O15 thin films improved, and the kinetic energies of the sputtered atoms increased, resulting in a structural improvement of the deposited CaLa4(Zr0.05Ti0.95)4O15 thin films. The optimum conditions for the growth of CaLa4(Zr0.05Ti0.95)4O15 thin films in this study were a RF power of 300 W and substrate temperature of 300 °C. A high dielectric constant of 46.2 (f = 1 MHz), dissipation factor of 0.049 (f = 1 MHz) and a low leakage current density of 7.3 × 10−7 A/cm2 in an electrical field of 100 kV/cm were obtained for the prepared films.

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Section: Introductionmentioning

confidence: 99%