Fabrication of black silicon by Ni assisted chemical etching

Gao, Kai; Shen, Honglie; Liu, Youwen; Tang, Quntao; Jiang, Ye; Yang, Wangyang; Li, Yufang; Huang, Chunlai

doi:10.1088/2053-1591/aaa1fb

Cited by 9 publications

(7 citation statements)

References 15 publications

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“…Table 1 summarizes a list of literature on anti-reflection properties of textured Si surface. It is observed that the majority of the literature in Table 1 demonstrates reflectance varying from 1% to 5% in a textured Si surface, and the processing time is ranging from 1 h to 8 h [3,20,21,28]. In comparison to these reports, our process is significantly faster (only 65 s) to realize hierarchical texturing on Si that takes only 65 s. There are few pieces of literature that have demonstrated Si etching with a lesser time duration.…”

Section: Resultsmentioning

confidence: 99%

“…Additionally, inverted micro/nano-pyramid structures developed using micro/nano structured Si templates have also shown bright prospects towards light trapping [20,21,22,23,24,25,26,27]. Due to their V-shaped architecture, the incident light experiences multiple internal reflections along the side walls that overall leads to minimized reflection of light than the vertically grown pyramid micro-structures.…”

Section: Introductionmentioning

confidence: 99%

“…Due to their V-shaped architecture, the incident light experiences multiple internal reflections along the side walls that overall leads to minimized reflection of light than the vertically grown pyramid micro-structures. According to previous literature, micro-scaled inverted pyramidal structures were fabricated by metal nanoparticle assisted etching technique [20,21,22,23], whereas fabrication of nano-scale pyramids employed a combination of wet alkaline etching and photolithography technique [24,25,26,27]. However, due to the complexity and high cost, the photolithography process may not be preferred for high throughput commercial fabrication.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Rapid Processing of Wafer-Scale Anti-Reflecting 3D Hierarchical Structures on Silicon and Its Templation

et al. 2018

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Hierarchically structured silicon (Si) surfaces with a combination of micro/nano-structures are highly explored for their unique surface and optical properties. In this context, we propose a rapid and facile electroless method to realize hierarchical structures on an entire Si wafer of 3″ diameter. The overall process takes only 65 s to complete, unlike any conventional wet chemical approach that often combines a wet anisotropic etching of (100) Si followed by a metal nanoparticle catalyst etching. Hierarchical surface texturing on Si demonstrates a broadband highly reduced reflectance with average R% ~ 2.7% within 300–1400 nm wavelength. The as-fabricated hierarchical structured Si was also templated on a thin transparent layer of Polydimethylsiloxane (PDMS) that further demonstrated prospects for improved solar encapsulation with high optical clarity and low reflectance (90% and 2.8%).

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Rapid Processing of Wafer-Scale Anti-Reflecting 3D Hierarchical Structures on Silicon and Its Templation

et al. 2018

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“…The MACE etching reaction for Ni on a Si wafer is expressed in Equation ( 9): At the optimum concentration level, around 2.30% reflectively was obtained with Ni nanoparticles, which was 8% lower than their results with Cu and Ni combined, as illustrated in Figure 10c. In their experiment, they also noted the way Ni nanoparticles wiped out or disappeared during the MACE process; this has not happened for other noble metals like Ag [69].…”

Section: Nickel (Ni)mentioning

confidence: 94%

Fabrication of Black Silicon via Metal-Assisted Chemical Etching—A Review

et al. 2021

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The metal-assisted chemical etching (MACE) technique is commonly employed for texturing the wafer surfaces when fabricating black silicon (BSi) solar cells and is considered to be a potential technique to improve the efficiency of traditional Si-based solar cells. This article aims to review the MACE technique along with its mechanism for Ag-, Cu- and Ni-assisted etching. Primarily, several essential aspects of the fabrication of BSi are discussed, including chemical reaction, etching direction, mass transfer, and the overall etching process of the MACE method. Thereafter, three metal catalysts (Ag, Cu, and Ni) are critically analyzed to identify their roles in producing cost-effective and sustainable BSi solar cells with higher quality and efficiency. The conducted study revealed that Ag-etched BSi wafers are more suitable for the growth of higher quality and efficiency Si solar cells compared to Cu- and Ni-etched BSi wafers. However, both Cu and Ni seem to be more cost-effective and more appropriate for the mass production of BSi solar cells than Ag-etched wafers. Meanwhile, the Ni-assisted chemical etching process takes a longer time than Cu but the Ni-etched BSi solar cells possess enhanced light absorption capacity and lower activity in terms of the dissolution and oxidation process than Cu-etched BSi solar cells.

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“…Until now, diverse methods have been proposed for the formation of black-Si including reactive ion etching (RIE) [4], metal-assisted etching with gold [5] or silver [6] nanoparticles, electrochemical etching, etc. The black-Si formation using one- [7] or two- [8] step nickel nanoparticlesassisted etching was also demonstrated. Unfortunately, there are serious drawbacks that highly limit application of these methods.…”

Section: Introductionmentioning

confidence: 95%

Black silicon quality control by conditions of nickel-assisted etching of crystalline silicon surfaces in photovoltaic devices

Kamarauskas¹,

Treideris²,

Agafonov³

et al. 2020

physics

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Here we present a study of the nickel-assisted etching applied to form uniform black silicon layers on crystalline silicon substrates. We related the parameters used for technological process control (etchant, nickel thickness) to parameters of the obtained surface and explain the correlation using the etching model responsible for etching of the silicon covered by a thin nickel film. The increase in the thickness of the metal catalyst did not suppress the etching completely but allowed one to tune the roughness of the silicon surface. The rate of the electrochemical etching was additionally changed by adaptation of the proportion of components in the complex etchant. Depending on the intentionally selected conditions, the duration of the optimized process was from 3 to 10 min. The lowest optical reflection commonly accepted as the black silicon surface was obtained for the mixture with a low amount of the active etchant component. It was demonstrated that the method is acceptable to improve the characteristics of a photovoltaic cell.

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Fabrication of black silicon by Ni assisted chemical etching

Cited by 9 publications

References 15 publications

Rapid Processing of Wafer-Scale Anti-Reflecting 3D Hierarchical Structures on Silicon and Its Templation

Rapid Processing of Wafer-Scale Anti-Reflecting 3D Hierarchical Structures on Silicon and Its Templation

Fabrication of Black Silicon via Metal-Assisted Chemical Etching—A Review

Black silicon quality control by conditions of nickel-assisted etching of crystalline silicon surfaces in photovoltaic devices

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