Fabrication of antireflective layers on silicon using metal-assisted chemical etching with in situ deposition of silver nanoparticle catalysts

Geng, Xuewen; Qi, Zhihua; Li, Meicheng; Duan, Barrett K.; Zhao, Liancheng; Bohn, Paul W.

doi:10.1016/j.solmat.2012.04.020

Cited by 53 publications

(22 citation statements)

References 31 publications

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“…MAE displays little crystallographic dependence and can be performed on crystalline or multicrystalline Si substrates, and the various Si morphologies and nanomicrostructures obtained are promising for photovoltaic applications in several areas: antireflective coating (Yae et al 2003(Yae et al , 2005(Yae et al , 2006Peng et al 2005a, b;Benoit et al 2008;Lu and Barron 2013;Tsujino and Matsumura 2006b;Chaoui et al 2008;Nishioka et al 2008Nishioka et al , 2009Srivastava et al 2010;Cao et al 2011;Kim et al 2011Kim et al , 2012Geng et al 2012;Wang et al 2013b;Li et al 2013a), texturization for multicrystalline wafers (Tsujino and Matsumura 2006a;Waheed et al 2010;Branz et al 2009;Li et al 2012;Wan et al 2008;Koynov et al 2006Koynov et al , 2007Lipiński 2008;Bastide et al 2009;Yuan et al 2009;Lin et al 2010;Toor et al 2011;Oh et al 2012;Srivastava et al 2012;Tang et al 2013;Shi et al 2013a, b;Hsu et al 2012), porous emitter (Hadjersi and Gabouze 2008;Li et al 2013b), advanced solar cells based on cylindrical macropores (Peng et al 2010) or Si nanorods or nanowires (Garnett and Yang 2008), and layer detachment technique to prepare solar cells based on low-quality substrates or on ultrathin Si layers …”

Section: Applicationsmentioning

confidence: 99%

Porous Silicon Formation by Metal Nanoparticle-Assisted Etching

Lévy‐Clément¹

2014

Handbook of Porous Silicon

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Section: Applicationsmentioning

confidence: 99%

Porous Silicon Formation by Metal Nanoparticle-Assisted Etching

Lévy‐Clément¹

2014

Handbook of Porous Silicon

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“…Based on lowering the reflectance by MacEtch, the efficiency of optoelectronic devices such as solar cells, photodetectors, LEDs, and photoelectrochemical cell was enhanced. [ 32–35 ] Because metal–semiconductor interface may create recombination sites, any metal remaining after etching is typically removed.…”

Section: Introductionmentioning

confidence: 99%

Ultralow Optical and Electrical Losses via Metal‐Assisted Chemical Etching of Antireflective Nanograss in Conductive Mesh Electrodes

Kim

Bong

et al. 2020

Advanced Optical Materials

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Various types of anti‐reflective technologies are capable of increasing the light absorption of optical devices. The electrical conductivity of the collected carriers must also be increased for efficient photoelectric conversion. However, increasing the front electrode area reduces the amount of light absorption, causing shading and resistive losses to conflict in front‐illuminated devices. In this study, a low‐reflectance surface and high‐conductance electrode for Schottky photodiodes are fabricated using metal‐assisted chemical etching (MacEtch). Si nanograss (SiNG) and Ag‐mesh formed via MacEtch serve as a subwavelength surface and buried electrodes, respectively. SiNG increases light absorption without causing shading loss, while the buried Ag‐mesh considerably improves electrical conductivity. The SiNG/Ag‐mesh structure exhibits a solar weighted reflectance of 1.20% and a sheet resistance of 5.48 Ω □−1. The SiNG/Ag‐mesh Schottky photodiode exhibits an external quantum efficiency of 89.5% at a wavelength of 860 nm and an internal photoemission effect in the sub‐band gap. The self‐organized SiNG/Ag‐mesh, fabricated through a simple wet‐etching method, simultaneously addresses the issues of optical and electrical losses, enabling the application of this technique to a wide range of optoelectronic devices.

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“…3 (resistivity in the order of 1.1 Â 10 À3 U cm) were used as the bulk templates. Prior to nanopillar formation experiments, the GaAs substrates were partitioned into 1 cm 2 pieces.…”

mentioning

confidence: 99%

Fabrication and characterisation of GaAs nanopillars using nanosphere lithography and metal assisted chemical etching

et al. 2016

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. (2016). Fabrication and characterisation of GaAs nanopillars using nanosphere lithography and metal assisted chemical etching. RSC Advances: an international journal to further the chemical sciences, 6 30468-30473.Fabrication and characterisation of GaAs nanopillars using nanosphere lithography and metal assisted chemical etching AbstractWe present a low-cost fabrication procedure for the production of nanoscale periodic GaAs nanopillar arrays, using the nanosphere lithography technique as a templating mechanism and the electrochemical metal assisted etch process (MacEtch). The room-temperature photoluminescence (PL) and Raman spectroscopic properties of the fabricated pillars are detailed, as are the structural properties (scanning electron microscopy) and fabrication process. From our PL measurements, we observe a singular GaAs emission at 1.43 eV with no indications of any blue or green emissions, but with a slight redshift due to porosity induced by the MacEtch process and characteristic of porous GaAs (p-GaAs). This is further confirmed via Raman spectroscopy, where additionally we observe the formation of an external cladding of elemental As around our nanopillar features. The optical emission is enhanced by an order magnitude (~300%) for our nanopillar sample relative to the planar unprocessed GaAs reference. We present a low-cost fabrication procedure for the production of nanoscale periodic GaAs nanopillar arrays, using the nanosphere lithography technique as a templating mechanism and the electrochemical metal assisted etch process (MacEtch). The room-temperature photoluminescence (PL) and Raman spectroscopic properties of the fabricated pillars are detailed, as are the structural properties (scanning electron microscopy) and fabrication process. From our PL measurements, we observe a singular GaAs emission at 1.43 eV with no indications of any blue or green emissions, but with a slight redshift due to porosity induced by the MacEtch process and characteristic of porous GaAs (p-GaAs). This is further confirmed via Raman spectroscopy, where additionally we observe the formation of an external cladding of elemental As around our nanopillar features. The optical emission is enhanced by an order magnitude ($300%) for our nanopillar sample relative to the planar unprocessed GaAs reference.

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Fabrication of antireflective layers on silicon using metal-assisted chemical etching with in situ deposition of silver nanoparticle catalysts

Cited by 53 publications

References 31 publications

Porous Silicon Formation by Metal Nanoparticle-Assisted Etching

Porous Silicon Formation by Metal Nanoparticle-Assisted Etching

Ultralow Optical and Electrical Losses via Metal‐Assisted Chemical Etching of Antireflective Nanograss in Conductive Mesh Electrodes

Fabrication and characterisation of GaAs nanopillars using nanosphere lithography and metal assisted chemical etching

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