Fabrication of an As2S8 stripe waveguide with an optical stopping effect by exposure to ultraviolet irradiation

Zou, Liner; Chen, B. X.; Chen, L.; Yuan, Yifang; Hamanaka, Marcos Henrique Mamoru Otsuka; Iso, Mamoru

doi:10.1063/1.2195782

Cited by 18 publications

(5 citation statements)

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“…Optical losses are a key parameter for potential applications of chalcogenide‐based thin films. The majority of studies presents optical losses values for chalcogenide waveguide ranging from a few dB/cm up to 10 dB/cm including the middle IR 23–28 . It is worthy to note foregoing work on As 2 S 3 and Ge 33 As 12 Se 55 thin films deposited by ultra fast PLD.…”

Section: Introductionmentioning

confidence: 99%

“…The majority of studies presents optical losses values for chalcogenide waveguide ranging from a few dB/cm up to 10 dB/cm including the middle IR. [23][24][25][26][27][28] It is worthy to note foregoing work on As 2 S 3 and Ge 33 As 12 Se 55 thin films deposited by ultra fast PLD. The waveguides obtained by dry etching gave values of 0.25 and 0.3 dB/cm, respectively.…”

Section: Introductionmentioning

confidence: 99%

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Sputtering and Pulsed Laser Deposition for Near- and Mid-Infrared Applications: A Comparative Study of Ge25Sb10S65 and Ge25Sb10Se65 Amorphous Thin Films

Nazabal

Charpentier

Adam

et al. 2011

International Journal of Applied Ceramic Technology

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International audienceThe deposition of Ge25Sb10S65 and Ge25Sb10Se65 amorphous chalcogenide thin films was performed by radio-frequency magnetron sputtering and pulsed laser deposition technique. The deposited layers were characterized by studying their morphology, topography, chemical composition, structure, and optical functions permitting a direct comparison of two deposition methods for obtaining attractive amorphous chalcogenide films. Reactive ion etching was then used to pattern rib/ridge waveguides in sulfide and selenide films with low surface roughness, vertical sidewalls, and reasonable etching rate. Optical losses of fabricated waveguides were measured at 1550 nm with values better than 1 dB/cm obtained for sulfide/selenide films deposited by both techniques

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Sputtering and Pulsed Laser Deposition for Near- and Mid-Infrared Applications: A Comparative Study of Ge25Sb10S65 and Ge25Sb10Se65 Amorphous Thin Films

Nazabal

Charpentier

Adam

et al. 2011

International Journal of Applied Ceramic Technology

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“…Photon absorption of these subenergy bands is reported by our optical stopping effect experiments [6,7]. Reported cutoff response time is in milliseconds [8]. The recovery process can be regarded as two processes.…”

Section: Introductionmentioning

confidence: 97%

Recovery process of optical stopping effect in tin or phosphorus-doped amorphous As₂S₈thin-film waveguide

et al. 2012

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In this research, the recovery process of the optical stopping effect on an amorphous arsenic sulfide thin-film waveguide is studied, both on the net As(2)S(8) and doping As(2)S(8) waveguide. Based on the experimental results, we analyzed the chemical bond structure of the samples. The hybrid orbital theory and electron energy bandgap theory are applied in order to establish the model of optical stopping and the recovery process. The numerical analysis results are well matched with the experiment data, which indicates that the model properly explains the optical stopping effect phenomenon. The model also can be applied to predict the recovery process of the optical stopping effect.

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“…Especially, optical stopping experiments examining the photooptical effect of as-deposited As 2 S 8 films have revealed that the transition process for sublevel electrons occurs by pumping sublevel electrons under irradiation in the band gap region, which does not occur in the amorphous As 2 S 3 . [14] This effect is expected to be applied to the development of the new waveguide devices with the photo-optical effect.…”

Section: Introductionmentioning

confidence: 98%

Fabrication of As 2 S 8 channel waveguide with a low propagation loss

et al. 2008

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A 2 S 8 glass films are shown to undergo changes in the refractive index under ultraviolet (UV) illumination and annealing treatment, respectively. Under UV illumination, the maximum change in the refractive index of the as-deposited As 2 S 8 is ~0.056; while under annealing treatment, it lies on and increases with increase of the annealing temperature. In addition, the changes of the refractive index in the well-illuminated A 2 S 8 glass films after annealing are not reversible until the annealing temperature is up to 160°C.The A 2 S 8 channel waveguide fabricated by exposure to UV illumination still exists after annealing of 130~160°C, and the refractive index differences between the areas of the channel waveguide and the planar waveguide in this waveguide are 0.0120~0.0081. Light propagation experiment shows that this A 2 S 8 channel waveguide has a light guide character with good quality and a low propagation loss of ~4dB/cm.

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Fabrication of an As2S8 stripe waveguide with an optical stopping effect by exposure to ultraviolet irradiation

Cited by 18 publications

References 9 publications

Sputtering and Pulsed Laser Deposition for Near- and Mid-Infrared Applications: A Comparative Study of Ge25Sb10S65 and Ge25Sb10Se65 Amorphous Thin Films

Sputtering and Pulsed Laser Deposition for Near- and Mid-Infrared Applications: A Comparative Study of Ge25Sb10S65 and Ge25Sb10Se65 Amorphous Thin Films

Recovery process of optical stopping effect in tin or phosphorus-doped amorphous As₂S₈thin-film waveguide

Fabrication of As 2 S 8 channel waveguide with a low propagation loss

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Fabrication of an As2S8 stripe waveguide with an optical stopping effect by exposure to ultraviolet irradiation

Cited by 18 publications

References 9 publications

Sputtering and Pulsed Laser Deposition for Near- and Mid-Infrared Applications: A Comparative Study of Ge25Sb10S65 and Ge25Sb10Se65 Amorphous Thin Films

Sputtering and Pulsed Laser Deposition for Near- and Mid-Infrared Applications: A Comparative Study of Ge25Sb10S65 and Ge25Sb10Se65 Amorphous Thin Films

Recovery process of optical stopping effect in tin or phosphorus-doped amorphous As2S8thin-film waveguide

Fabrication of As 2 S 8 channel waveguide with a low propagation loss

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Recovery process of optical stopping effect in tin or phosphorus-doped amorphous As₂S₈thin-film waveguide