2017
DOI: 10.1016/j.tsf.2017.01.022
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Fabrication of amorphous silicon nitride thin films by radio-frequency sputtering assisted by an inductively coupled plasma

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Cited by 5 publications
(1 citation statement)
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“…These films also play important role in optoelectronic applications such as antireflection coatings and optimization of optical performance of devices due to its capability of providing the refractive index variation from silicon oxide like (~1.46) to stochiometric silicon nitride (~2.0) and by providing transparency in ultraviolet (250nm) to infrared (9µm) regions of optical spectrum [3]. Silicon nitride films can be produced through various methods such as atomic layer deposition [4], chemical vapor deposition and sputtering [5,6]. The advantage of sputtering technique over rest of two techniques is low temperature deposition which enables sputtering to employ the substrates that can't tolerate high temperatures.…”
Section: Introductionmentioning
confidence: 99%
“…These films also play important role in optoelectronic applications such as antireflection coatings and optimization of optical performance of devices due to its capability of providing the refractive index variation from silicon oxide like (~1.46) to stochiometric silicon nitride (~2.0) and by providing transparency in ultraviolet (250nm) to infrared (9µm) regions of optical spectrum [3]. Silicon nitride films can be produced through various methods such as atomic layer deposition [4], chemical vapor deposition and sputtering [5,6]. The advantage of sputtering technique over rest of two techniques is low temperature deposition which enables sputtering to employ the substrates that can't tolerate high temperatures.…”
Section: Introductionmentioning
confidence: 99%