Fabrication of aluminium doped zinc oxide (AZO) transparent conductive oxide by ultrasonic spray pyrolysis

Transparent conducting n-type ZnO:Sc – synthesis, optoelectronic properties and theoretical insight

“…The unique properties of these indispensable materials are unusual by traditional principles; the wide band gap required for optical transparency (E g 4 3.1 eV) which separates the valence band (VB) from the conduction band (CB) leads to highly resistive semiconductor behaviour in pure stoichiometric ZnO, due to the low probability of electron excitation across this threshold. However, doping of the material offers a solution to this dilemma; extrinsic doping by artificial introduction of substitutional impurities such as Al(III) 1 or Ga(III) 2 on Zn(II) crystallographic sites results in an effective local excess of electrons at the defect sites. This produces an electron donor level close to the CB minimum (CBM), which facilitates donation of electrons into the CB to confer electrical conductivity to the material whilst the wide optical band gap is retained.…”

“…This produces an electron donor level close to the CB minimum (CBM), which facilitates donation of electrons into the CB to confer electrical conductivity to the material whilst the wide optical band gap is retained. In this way, it is possible to synthesise transparent and conducting inorganic materials such as ZnO:(Al, 1 Ga, 2 F, 3 …”

Laser Prepared Thin Films for Optoelectronic Applications

“…In the field of OPV applications, the requested TCO can be obtained using methods such as RF magnetron sputtering, oxygen ion beam-assisted deposition, spray chemical vapor deposition (CVD), PLD, and spray pyrolysis [22][23][24][25][26].…”

Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au

“…26 AZO has been heavily studied for transparent and flexible device applications such as display panels, gas sensors, organic light emitting diodes, and other optoelectronic devices. [27][28][29][30][31][32] In this letter, we report on the use of AZO interlayers in facilitating Ohmic behavior in Ti/Au contacts on n-type, Si implanted β-Ga 2 O 3 . The minimum specific contact resistance of 2.82×10 -5 Ω-cm 2 was achieved after annealing at 400 • C. By sharp contrast, Ti/Au contacts without the AZO did not lead to Ohmic behavior.…”

“…Low temperature annealing further improved the Ohmic behavior, with compliance of 100 mA reached first by the sample annealed at 400 • C. Increasing annealing temperature further did not improve performance. In previous works, annealing above 300 • C has been found to decrease the carrier concentration and electron mobility within the AZO layer [26][27][28][29][30] temperatures and can be seen when comparing the I-V curves of annealing temperatures 400 • C and 600 • C. The TLM data was used to extract the sheet resistance (R S ), specific contact resistance (R C ), and transfer resistance (R T ). A sample output resistance vs. gap size from AZO contact stack annealed at 400 • C is shown in Figure 4, and a strong linear dependence (r 2 = 0.991) is observed.…”