Fabrication of AlN/Si SAW delay lines with very low RF signal noise

Ingrosso, I.; Petroni, Simona; Altamura, Davide; Vittorio, Massimo De; Combi, C.; Passaseo, A.

doi:10.1016/j.mee.2007.01.100

Cited by 22 publications

(6 citation statements)

References 7 publications

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“…16,17 The change in resonance frequency due to the adsorption of nanoparticle conjugates can be used as the sensor response. The interdigital transducers ͑IDTs͒ prepared by 150 nm Al metallization using standard photolithographic process consisted of 50 finger pairs with an acoustic aperture of 1.7 mm, a center to center separation of 5.1 mm, and a periodicity of 34 m, which corresponds to the SAW wavelength ͑͒.…”

Section: Immobilization Of Dna-au Nanoparticles On Aminosilane-functimentioning

confidence: 99%

Immobilization of DNA-Au nanoparticles on aminosilane-functionalized aluminum nitride epitaxial films for surface acoustic wave sensing

Chiu

Lee

Kuo

et al. 2008

Applied Physics Letters

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A generic method for immobilization of gold nanoparticle bioconjugates onto aluminum nitride (AlN) surfaces using aminosilane molecules as cross-linkers is demonstrated for surface acoustic wave (SAW) sensor applications. Electrostatic interaction between positively charged surface amine groups and negatively charged DNA-Au nanoparticle conjugates allows the self-assembly of a probe nanoparticle monolayer onto functionalized AlN surfaces under physiological conditions. Both 10 and 20 nm Au nanoparticles bound with thiolated oligonucleotides were employed in the detection scheme. We show that Au nanoparticles can play multiple roles in SAW sensing for probe immobilization, signal amplification, and labeling.

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Section: Immobilization Of Dna-au Nanoparticles On Aminosilane-functimentioning

confidence: 99%

Immobilization of DNA-Au nanoparticles on aminosilane-functionalized aluminum nitride epitaxial films for surface acoustic wave sensing

Chiu

Lee

Kuo

et al. 2008

Applied Physics Letters

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“…Aluminium nitride (AlN) exhibits excellent properties such as a high acoustic wave velocity (Tsubouchi and Mikoshiba 1985), high chemical inertness (Kar et al 2005), a wide bandgap, and good electrical isolation (Engelmark et al 2003), in addition to its well-known piezoelectric properties with remarkable values for the piezoelectric coefficients d 31 , d 33 (Ababneh et al 2010) and to its CMOS compatible fabrication process. These outstanding properties of AlN emphasize it as a very attractive material for the fabrication of micromachined devices in various applications, such as surface acoustic-wave devices (Ingrosso et al 2007), energy harvesters (Marzencki et al 2008), pressure sensors (Akiyama et al 2006), resonators (Piazza and Pisano 2007) and gyroscopes (Gunthner et al 2006). Furthermore, the development of new photonic devices requires precise information about optical properties, such as refractive index, optical losses and electro-optic constants (Lu et al 2018;Xiong et al 2014;Sun et al 2017).…”

Section: Introductionmentioning

confidence: 99%

Optical and structural properties of aluminium nitride thin-films synthesized by DC-magnetron sputtering technique at different sputtering pressures

et al. 2021

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Aluminium nitride thin-films (AlN) were fabricated by a DC-magnetron sputtering technique at different background pressures while maintaining the same deposition conditions. The influence of varying sputtering pressure on the structural and optical properties of AlN thin-films was investigated. XRD measurements were utilized to determine the structural properties of the deposited AlN thin-films such as strain, stress, crystallite size, and crystalline density. They confirmed the hexagonal wurtzite structure of AlN thin-films and the increase in the degree of c-axis orientation as the sputtering pressure decreases. The optical properties of AlN thin-films, deposited on glass substrates, were analyzed by means of transmittance and absorption spectra using a UV-Vis spectrophotometer. The results have shown that an increase in the sputtering pressure leads to a shift of the threshold transmittance towards the lower wavelength range. This results in widening the optical bandgap and decreasing both the refractive index and the extinction coefficient. The dispersion of the refractive index is investigated according to the Wemple-DiDomenico single oscillator model and the model parameters (such as effective single oscillator E 0 , dispersion energy E d , zero-frequency dielectric constant e 0 and optical moments) were estimated accordingly.

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“…At n ≤ 75, the band distance is not really affected, resulting in a suitable number of finger pairs less than 75. In case of using discrete filters on high resistive substrates (> 4000 Ωcm) n = 300 could be suitable for a low IL (-21.6 dB) and a reduced crosstalk [16,17].…”

Section: Resultsmentioning

confidence: 99%

Crosstalk suppression of CMOS compatible AlN based SAW devices on low resistive Si(100)

Kaletta

Wolansky

Wipf

et al. 2014

Phys. Status Solidi C

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Aluminum nitride (AlN) based high frequency surface acoustic wave (SAW) devices are produced by using a new CMOS compatible concept. Textured c‐axis oriented AlN films have been deposited on tungsten based embedded interdigital transducers (IDTs) by the reactive pulse DC‐sputter technique within the thermal budget of back end of line (BEOL) processes. Two SAW Rayleigh modes with different acoustic velocities were measured and identified by finite element method (FEM) simulation (Kaletta and Wenger, FEM Simulation of Rayleigh waves for CMOS compatible SAW devices based on AlN/SiO2/Si(100) (Elsevier Ultrasonics, available online 18 April 2013, ISSN 0041‐624X, 10.1016/j.ultras.2013.04.009) [1]). Electromagnetic crosstalk between in‐ and output IDTs via low resistive Silicon substrates is one of the most troublesome sources of integrated SAW devices. The impact of several device parameters like the acoustic aperture, the number of fingers and the delay line length on the electromagnetic crosstalk was studied and routes for optimizing SAW filter designs on low resistive Si(100) will be presented. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Fabrication of AlN/Si SAW delay lines with very low RF signal noise

Cited by 22 publications

References 7 publications

Immobilization of DNA-Au nanoparticles on aminosilane-functionalized aluminum nitride epitaxial films for surface acoustic wave sensing

Immobilization of DNA-Au nanoparticles on aminosilane-functionalized aluminum nitride epitaxial films for surface acoustic wave sensing

Optical and structural properties of aluminium nitride thin-films synthesized by DC-magnetron sputtering technique at different sputtering pressures

Crosstalk suppression of CMOS compatible AlN based SAW devices on low resistive Si(100)

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