“…86 In this respect, rGO has been employed to modify the TiO 2 semiconducting layer, resulting in DSSCs with PCEs, such as 7.20, 87 7.48, 88 7.68, 89 8.51, 90 4.43 76 and 6.90%, 91 which generally outperformed their pristine TiO 2 , rGO and GO/TiO 2 counterparts. In addition, rGO-based ternary nanocomposites, such as TiO 2 / cadmium sulde (CdS)/rGO, 92 rGO/graphene/TiO 2 , 18 and Ag/ rGO/TiO 2 , 93,94 have also been used as semiconducting layers in DSSCs, which helped to increase the electron transfer rate and mobility. This resulted in devices with PCEs of 6.50, 11.80, 6.87 and 9.15%, respectively, which outperformed the corresponding TiO 2 reference device, thereby, revealing the importance of employing graphene-based nanocomposites in future research to enhance device performance.…”