2000
DOI: 10.1002/(sici)1521-4095(200002)12:4<285::aid-adma285>3.0.co;2-d
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Fabrication of a Sexithiophene Semiconducting Wire: Nanoshaving with an Atomic Force Microscope Tip

Abstract: The set-up of the holographic grating experiment is sketched in Figure 5. Intensity gratings with a grating constant of L = 5.1 mm were obtained by the interference of two coherent, linearly polarized laser beams in the plane of the sample. We used a continuous wave argon ion laser operating at

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Cited by 18 publications
(11 citation statements)
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(6 reference statements)
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“…Understanding of the role of microstructure on transport can be facilitated by microscopic conductance measurements on individual grains and grain boundaries (GBs). Toward this goal, we previously reported an approach for electrically contacting single grains of the organic semiconductor sexithiophene (‘6T', E gap ∼ 2.3 eV) …”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…Understanding of the role of microstructure on transport can be facilitated by microscopic conductance measurements on individual grains and grain boundaries (GBs). Toward this goal, we previously reported an approach for electrically contacting single grains of the organic semiconductor sexithiophene (‘6T', E gap ∼ 2.3 eV) …”
Section: Introductionmentioning
confidence: 99%
“…The barrier φ B from eq 2B is an intrinsic quantity of the Au/6T interface that does not take into account nonidealities, such as trap states, which exist near the contact because of disorder. We have shown in previous studies that our devices demonstrate reversible trapping of positive charge carriers . Defining the effective barrier Φ to be a function of V D and V G allows us to account for any changes in the properties of the Au/6T interface (e.g., trapping or barrier lowering), that are sensitive to the interfacial electric field.…”
Section: Introductionmentioning
confidence: 99%
“…7,8 The probe pressed against the substrate can then be scanned to produce lines. This technique is known as nanoshaving, 9 nanografting, 10 or plowing lithography. 11 The probe can be resistively heated to minimize the force needed to perform these types of lithographies on polymer surfaces.…”
Section: Subdiffraction-limited Milling By An Optically Driven Single...mentioning
confidence: 99%
“…For example, positioning the probe at specific surface locations and then applying a large force to the probe may result in irreversible indenting of the surface, which can be used to record structures. , The probe pressed against the substrate can then be scanned to produce lines. This technique is known as nanoshaving, nanografting, or plowing lithography . The probe can be resistively heated to minimize the force needed to perform these types of lithographies on polymer surfaces. , Alternatively, the probe in close contact with the substrate is exposed to femtosecond laser pulses resulting in a tip-enhanced ablation .…”
mentioning
confidence: 99%
“…Die DPN unterscheidet sich sowohl von der Idee als auch von der praktischen Ausführung her grundlegend vom STM-Ansatz der Nanofertigung ("pick-and-place") und stellt eine drastische Abweichung von Techniken dar, die elektrische, [8] thermische, [4,9] mechanische [10] oder photochemische Energie [11] einer Oberfläche zuführen (Abbildung 1). So verwendete man bei der DPN eine AFM-Spitze als Lithographie-…”
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