Fabrication of a novel magnetic topological heterostructure and temperature evolution of its massive Dirac cone

Hirahara, Toru; Otrokov, M. M.; Sasaki, Taizô; Sumida, Kazuki; Tomohiro, Yuta; Kusaka, S.; Okuyama, Yuma; Ichinokura, Satoru; Kobayashi, Masaki; Takeda, Yukiharu; Amemiya, Kenta; Shirasawa, Tetsuroh; Ideta, S.; Miyamoto, Koji; Tanaka, Kiyohisa; Kuroda, Shinji; Okuda, Takashi; Hono, K.; Еремеев, С. В.; Chulkov, Eugene V.

doi:10.1038/s41467-020-18645-9

Cited by 59 publications

(30 citation statements)

References 42 publications

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“…[190]. In addition to these, intrinsic magnetic TIs, such as, CrBi 2 Se 4 , [ 195 ] MnBi 2 Se 4 , [ 127 ] MnBi 2 Te 4 [ 128,129 ] and superlattice structures, such as MnBi 8 Te 13 , [ 196 ] as well as dilute magnetic doped TI have both surface as well as bulk bandgaps, and some of these are conventional insulators in the monolayer limit. Hence, these materials can also be used as the ferromagnetic insulator (FMI) in such heterostructures.…”

Section: Recent Results In Topological Insulator (Ti) – Magnetic Materials (Mm) Heterostructuresmentioning

confidence: 99%

“…It was proposed that this type of proximity effect would be more efficient in heterostructures where the MM and TI have i) exactly the same or similar crystal structure, and ii) similar atomic composition. [ 93,125–129 ] However, thus far, a limited range of structures have been explored theoretically, and ab initio calculations are difficult for non‐commensurate structures, so it remains an open question how to optimize the heterostructures for magnetic extension. We will discuss this mechanism in detail in Section 3.1.4, in the context of layered FMI–TI heterostructures.…”

Section: Mechanisms Of Proximity Effectmentioning

confidence: 99%

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Recent Progress in Proximity Coupling of Magnetism to Topological Insulators

et al. 2021

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Inducing long‐range magnetic order in 3D topological insulators can gap the Dirac‐like metallic surface states, leading to exotic new phases such as the quantum anomalous Hall effect or the axion insulator state. These magnetic topological phases can host robust, dissipationless charge and spin currents or unique magnetoelectric behavior, which can be exploited in low‐energy electronics and spintronics applications. Although several different strategies have been successfully implemented to realize these states, to date these phenomena have been confined to temperatures below a few Kelvin. This review focuses on one strategy: inducing magnetic order in topological insulators by proximity of magnetic materials, which has the capability for room temperature operation, unlocking the potential of magnetic topological phases for applications. The unique advantages of this strategy, the important physical mechanisms facilitating magnetic proximity effect, and the recent progress to achieve, understand, and harness proximity‐coupled magnetic order in topological insulators are discussed. Some emerging new phenomena and applications enabled by proximity coupling of magnetism and topological materials, such as skyrmions and the topological Hall effect, are also highlighted, and the authors conclude with an outlook on remaining challenges and opportunities in the field.

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Section: Recent Results In Topological Insulator (Ti) – Magnetic Materials (Mm) Heterostructuresmentioning

confidence: 99%

Section: Mechanisms Of Proximity Effectmentioning

confidence: 99%

Recent Progress in Proximity Coupling of Magnetism to Topological Insulators

et al. 2021

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“…Besides film and substrate reflections, there are also diffraction peaks of 010, 020, and 030 reflections from the protective Te capping layer, and two diffraction peaks from a MnTe phase in the S62 sample film grown under higher Mn supply. The presence of MnTe layers epitaxially oriented with the substrate lattice have already been observed, as well as the formation of multiple MnTe layers inside the MnBi 2 Te 4 blocks, given rise to blocks composed of 9, 11 or 13 layers [43]. The presence of MnTe clusters perturb locally the magnetic order of the sample and must be avoided.…”

Section: Resultsmentioning

confidence: 99%

X-ray diffraction tools for structural modeling of epitaxic films of an intrinsic antiferromagnetic topological insulator

S.¹,

Fornari²,

Camillo³

et al. 2021

Preprint

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Synthesis of new materials demands structural analysis tools suited to the particularities of each system. Van der Waals (vdW) materials are fundamental in emerging technologies of spintronics and quantum information processing, in particular topological insulators and, more recently, materials that allow the phenomenological exploration of the combination of non-trivial electronic band topology and magnetism. Weak vdW forces between atomic layers give rise to composition fluctuations and structural disorder that are difficult to control even in a typical binary topological insulators such as Bi 2 Te 3 . The addition of a third element as in MnBi 2 Te 4 makes the epitaxy of these materials even more chaotic. In this work, statistical model structures of thin films on single crystal substrates are described. It allows the simulation of X-ray diffraction in disordered heterostructures, a necessary step towards controlling the epitaxial growth of these materials. On top of this, the diffraction simulation method described here can be readily applied as a general tool in the field of design new materials based on stacking of vdW bonded layers of distint elements.

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“…Density functional theory (DFT) electronic structure calculations were carried out using the projector augmented wave method [35,36] implemented in VASP [37]. The exchange-correlation energy was treated using the generalized gradient approximation with the PBE exchange-correlation functional [38].…”

Section: Calculation Methodsmentioning

confidence: 99%

Interplay of Topological States on TI/TCI Interfaces

et al. 2020

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Based on first-principles calculations, we study electronic structure of interfaces between a Z2 topological insulator (TI) SnBi2Te4 and a topological crystalline insulator (TCI) SnTe. We consider two interface models characterized by the different atomic structure on the contact of the SnTe(111) and SnBi2Te4(0001) slabs: the model when two materials are connected without intermixing (abrupt type of interface) and the interface model predicted to be realized at epitaxial immersion growth on topological insulator substrates (smooth interface). We find that a strong potential gradient at the abrupt interface leads to the redistribution of the topological states deeper from the interface plane which prevents the annihilation of the Γ¯ Dirac states, predicted earlier. In contrast, a smooth interface is characterized by minor charge transfer, which promotes the strong interplay between TI and TCI Γ¯ Dirac cones leading to their complete annihilation.The M¯ topologically protected Dirac state of SnTe(111) survives irrespective of the interface structure.

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Fabrication of a novel magnetic topological heterostructure and temperature evolution of its massive Dirac cone

Cited by 59 publications

References 42 publications

Recent Progress in Proximity Coupling of Magnetism to Topological Insulators

Recent Progress in Proximity Coupling of Magnetism to Topological Insulators

X-ray diffraction tools for structural modeling of epitaxic films of an intrinsic antiferromagnetic topological insulator

Interplay of Topological States on TI/TCI Interfaces

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