2012
DOI: 10.1149/2.020205esl
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Fabrication of a Homojunction Light Emitting Diode with ZnO-Nanorods∕ZnO:As-Film Structure

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Cited by 5 publications
(1 citation statement)
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“…Zinc oxide (ZnO) with a wide direct bandgap of 3.37 eV and a large exciton binding energy of 60 meV, is one of the most extensively studied semiconducting materials for use in various types of applications [ 1 , 2 , 3 ]. One-dimensional ZnO nanostructures have become a subject of interest in the last decade due to their remarkable potential applications in electronics and optoelectronics devices such as photodetectors [ 2 , 4 ], light-emitting diodes [ 5 ] and solar cells [ 6 , 7 , 8 ]. Diverse group morphologies of ZnO nanostructures such as nanorods, nanowires, nanonails, nanotubes, nanocombs, nanosheets, nanobelts and nanoribbons have been synthesized by various physical and chemical fabrication techniques.…”
Section: Introductionmentioning
confidence: 99%
“…Zinc oxide (ZnO) with a wide direct bandgap of 3.37 eV and a large exciton binding energy of 60 meV, is one of the most extensively studied semiconducting materials for use in various types of applications [ 1 , 2 , 3 ]. One-dimensional ZnO nanostructures have become a subject of interest in the last decade due to their remarkable potential applications in electronics and optoelectronics devices such as photodetectors [ 2 , 4 ], light-emitting diodes [ 5 ] and solar cells [ 6 , 7 , 8 ]. Diverse group morphologies of ZnO nanostructures such as nanorods, nanowires, nanonails, nanotubes, nanocombs, nanosheets, nanobelts and nanoribbons have been synthesized by various physical and chemical fabrication techniques.…”
Section: Introductionmentioning
confidence: 99%