Fabrication of a 650V Superjunction MOSFET With Built-in MOS-Channel Diode for Fast Reverse Recovery

Ye, Zhi-Yuan; Liu, Lei; Yao, Yao; Lin, Mengyan; Wang, Pengfei

doi:10.1109/led.2019.2915008

Cited by 25 publications

(14 citation statements)

References 17 publications

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“…In this study, a novel 1.2 kV class MOS-channel diode embedded in a SiC superjunction MOSFET (MCD SJ-MOSFET) is proposed and analyzed by numerical Sentaurus TCAD simulation compared with a SiC superjunction MOSFET (SJ-MOSFET). Applying the MCD concept in a 650 V class Si SJ-MOSFET was implemented previously [22], but no attempts have been made to do so for the SiC SJ-MOSFET. Moreover, the short circuit characteristics of MCDs embedded in SiC MOSFETs have not been studied yet.…”

Section: Introductionmentioning

confidence: 99%

A Novel MOS-Channel Diode Embedded in a SiC Superjunction MOSFET for Enhanced Switching Performance and Superior Short Circuit Ruggedness

Yoon

Kim

2021

Electronics

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In this study, a novel MOS-channel diode embedded in a SiC superjunction MOSFET (MCD SJ-MOSFET) is proposed and analyzed by means of numerical TCAD simulations. Owing to the electric field shielding effect of the P+ body and the P-pillar, the channel diode oxide thickness (tco) of MCD can be set to very thin while achieving a low maximum oxide electric field (EMOX) under 3 MV/cm. Therefore, the turn-on voltage (VF) of the proposed structure was 1.43 V, deactivating the parasitic PIN body diode. Compared with the SJ-MOSFET, the reverse recovery time (trr) and the reverse recovery charge (Qrr) were improved by 43% and 59%, respectively. Although there is a slight increase in specific on-resistance (RON), the MCD SJ-MOSFET shows very low input capacitance (CISS) and gate to drain capacitance (CGD) due to the reduced active gate. Therefore, significantly improved figures of merit RON × CGD by a factor of 4.3 are achieved compared to SJ-MOSFET. As a result, the proposed structure reduced the switching time as well as the switching energy loss (ESW). Moreover, electro-thermal simulation results show that the MCD SJ-MOSFET has a short circuit withstand time (tSC) more than twice that of the SJ-MOSFET at various DC bus voltages (400 and 600 V).

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Section: Introductionmentioning

confidence: 99%

A Novel MOS-Channel Diode Embedded in a SiC Superjunction MOSFET for Enhanced Switching Performance and Superior Short Circuit Ruggedness

Yoon

Kim

2021

Electronics

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“…However, leakage current increases dramatically, and device long-term reliability is weakened. Integrating built-in MOS channel diode has been used to reduce the minority carrier injection of the body P-N junction diode of SJ-MOSFET [13][14]. Unfortunately, the thin oxide or the lowly doped P-base of the MOS channel diode causes an increase in leakage current and steps of fabrication process.…”

Section: Introductionmentioning

confidence: 99%

A Novel Superjunction MOSFET with Ultralow Reverse Recovery Charge and Low Switching Loss

Xia

Chen

Zhang

et al. 2021

Preprint

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A novel superjunction MOSFET (SJ-MOSFET) for ultralow reverse recovery charge (Q RR ) and low switching loss is proposed and investigated. This device features a P-type Schottky diode and a source field-plate. The P-type Schottky diode consists of Schottky contact and P-base, which is reverse series-connected with body P-N junction diode. And the source field-plate is formed by implementing a polysilicon field-plate electrically coupled to the source, which is on the top of N-pillar. During the reverse conduction state, the P-type Schottky diode is reverse biased, which dramatically suppresses minority carriers injecting into the drift region. Simultaneously, electron accumulation layer formed under the source field-plate, which provides a path for the reverse current. Consequently, compared with the conventional SJ-MOSFET (Conv-SJ-MOSFET), the proposed SJ-MOSFET achieves an 84.0% lower Q RR with almost no sacrifice in other characteristics. Moreover, the proposed device also exhibits 47.4% and 66.0% lower gate charge (Q G ) and gate to drain charge (Q GD ), respectively. The significantly reduced Q G , Q GD , and Q RR contribute to an overall improvement in switching losses and resultant over 54.8% decrease in total power losses with operation frequency higher than 50 kHz, demonstrating great potential of the proposed SJ-MOSFET used in power conversion systems.

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“…To reduce Q rr , lifetime killing methods have been adopted in commercial SJ-MOSFETs [8], [9]. Some other methods have also been investigated, such as integrating unipolar diode, and introducing tunneling diode [10], [11], [12], [13], [14], [15], [16], [17], [18], [19], [20]. To improve the softness, a lightly doped N-buffer layer is employed in modern SJ-MOSFETs through it increases the specific-on resistance [21], [22].…”

mentioning

confidence: 99%

Novel Approach Toward Body Diode Reverse Recovery Performance Improvement in Superjunction MOSFETs

Yang

et al. 2022

IEEE Electron Device Lett.

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In this paper, a novel superjunction MOSFET with ohm contact in the termination region and dual Schottky contacts in the cell region is proposed and experimentally demonstrated. The dual Schottky contacts consisting of the N-type Schottky contact and the P-type Schottky contact suppress the hole injection in the cell region, thereby reducing the reverse recovery charge and enhancing the current density in the termination region. The high current density and the ohm contact in the termination region provide sufficient slowly extracted non-equilibrium holes during the reverse reduction period, which contributes to a significantly improved softness. Experimental results show that, in comparison with the conventional superjunction MOSFET, 66.2% reduction in reverse recovery charge and 137.5% improvement in softness factor can be obtained in the proposed superjunction MOSFET.

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Fabrication of a 650V Superjunction MOSFET With Built-in MOS-Channel Diode for Fast Reverse Recovery

Cited by 25 publications

References 17 publications

A Novel MOS-Channel Diode Embedded in a SiC Superjunction MOSFET for Enhanced Switching Performance and Superior Short Circuit Ruggedness

A Novel MOS-Channel Diode Embedded in a SiC Superjunction MOSFET for Enhanced Switching Performance and Superior Short Circuit Ruggedness

A Novel Superjunction MOSFET with Ultralow Reverse Recovery Charge and Low Switching Loss

Novel Approach Toward Body Diode Reverse Recovery Performance Improvement in Superjunction MOSFETs

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