Fabrication of a 1024 × 1024 format long wavelength infrared focal plane array based on type-II superlattice and barrier enhanced structure

Wang, Fangfang; Xu, Zhicheng; Bai, Zhiyong; Li, Hui; Zhou, Yi; Chen, Jianxin; Li, He

doi:10.1016/j.infrared.2021.103700

Cited by 2 publications

(1 citation statement)

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“…They allow for the utilization of bandgap engineering design structures with long-wavelength absorption edge practically in the entire mid-infrared spectral range [6]. Furthermore, both their growth and processing technology matured in the last decade to the point, at which discrete photodetectors, as well as focal plane arrays based on them, are becoming more common [7][8][9].…”

Section: Introductionmentioning

confidence: 99%

The Role of Noise in Specific Detectivity of InAs/GaSb Superlattice MWIR Bariodes

Czuba

Ciura

Sankowska

et al. 2021

Sensors

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In this paper, the results of the electrical, noise, and optical characterization of p-i-n and p-B-i-n diodes with AlSb and 4 ML AlSb/8 ML GaSb superlattice barriers in High-Operating Temperature conditions, are presented. Experimental and theoretical noise parameters were compared. Both dark current and noise analysis showed that the p-Bp_bulk-i-n bariode had the best performance. P-i-n photodiodes had the highest experimental value of specific detectivity (D*) of 6.16 × 109 Jones at 210 K and zero bias. At about −1 V reverse bias, the bariode with AlSb/GaSb electron barrier caught up to it and both devices achieved D* = (1–1.1) × 108 Jones. Further optimization of the superlattice-based electron barrier should result in the improvement of bariode performance at a smaller bias, at which better noise performance is more pronounced. It was shown that neglecting the low-frequency noise component can lead to a significant overestimation of detectivity. The simple method of incorporation of low-frequency noise contribution in the detectivity calculation, without time-consuming measurements, has been proposed.

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