Fabrication of 65 nm hole pattern in 157 nm lithography

Abstract

We evaluated the fabrication of hole pattems in 157 nm lithography. In order to fabricate fine hole patterns to be required devices below 65 nm technology node, we have enhanced resolution and achieved a 65 nm hole pattem by using a high numerical aperture (=OM) stepper, a phase shifting mask, highly transparent resist materials, and a shrink process.