Fabrication of 3D-silicon micro-pillars/walls decorated with aluminum-ZnO/ZnO nanowires for optoelectric devices

Abstract

In this study, regularly patterned and hierarchically structured silicon (Si) micro-scale pillars and walls with high aspect ratio were fabricated using the deep reactive ion etching (DRIE) process. Dense arrays of ZnO nanowires were hydrothermally grown on the surface of the Si structures subsequent to the deposition of Aluminum-ZnO (AZO) thin films onto the vertically oriented p-and n-type Si micro-scale pillars and walls -resulting in three-dimensional (3D) heterostructures. Electrical and optical measurements of the fabricated p-n nanoheterojunctions demonstrate strong capabilities for detecting ultraviolet (UV)-visible (VIS) photons with drastically reduced reflection loss. We also demonstrate low-voltage sensing of gases using these structures through the field ionization process.

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

“…Section ). The hope is that new platforms based on lateral and vertical 1D, 2D or 3D III‐N structures will help in overcoming these challenges.…”

DC linearity and absorption efficiency enhancement by introducing photon-trapping microstructures into avalanche photodetectors

“…15 In our previous work, we have taken these insights and applied them to photodiodes. Structures explored include 1D micropillars, 16 2D micro walls, 17 and photon-trapping (PT) microstructures. 10,[18][19][20][21][22] Introducing the surface microstructures remedy the impact of reduced absorber layer thickness on the EQE of the APDs.…”