Fabrication of 3-Dimensional Structure of Metal Oxide Semiconductor Field Effect Transistor Embodied in the Convex Corner of the Silicon Micro-Fluidic Channel

Lim, Geunbae; Park, Chinsung; Lyu, Hong-Kun; Kim, Dong–Sun; Jeong, Yong-Taek; Park, Hey-Jung; Kim, Hyoung Sik; Shin, Jang−Kyoo; Choi, Pyung; Lee, Jong‐Hyun

doi:10.1143/jjap.42.4089

Cited by 1 publication

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“…Although the tip with MOS transistor is reported, some problems such as the misalignment may happen in the fabrication process (Suh et al 2003). In this paper, we use the in-plane tip to easily integrate the MOS transistor with the special etching techniques (Lim et al 2003). Figure 3 shows the schematic diagram of the 3-D MOS transistor tip fabrication.…”

Section: Process Design Of Mos Transistor Tip Fabricationmentioning

confidence: 99%

Fabrication and characterization of 3-Dimensional MOS transistor tip integrated micro cantilever

et al. 2006

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We fabricate and characterize a three-dimensional (3-D) MOS (metal-oxide-semiconductor) transistor tip integrated micro cantilever to measure the surface properties. The 3-D MOS transistor tip is fabricated on the front side end of the cantilever, and the cantilever itself works as a tip. These features make the device possible to investigate hard-detecting parts such as the deep trenches and the sidewalls of the structure. The MOS transistor tip has other advantages such as the high operation speed, the high sensitivity, and the reduction of the required equipments like the lock-inamplifier. The MOS transistor tip is fabricated threedimensionally, utilizing the lateral diffusion and the anisotropic wet etching with TMAH solution, since the etch rate of {211} plane is much higher than those of {100} or {111} planes. The gate area is formed by selfaligned technique, using crystallographic dependant wet etching. The well-known convex corner compensation pattern is used for the gate length control during the tip fabrication process. The characteristics of the fabricated device are measured with respect to the various electric signals and the results show the well-established detection properties.

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Section: Process Design Of Mos Transistor Tip Fabricationmentioning

confidence: 99%