2017
DOI: 10.1088/2043-6254/8/1/015003
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Fabrication of 25 μ m-filter microfluidic chip on silicon substrate

Abstract: This paper presents the entire fabrication process including photolithography, sputtering, deep reactive ion etching (Bosch DRIE process) on silicon substrate and bonding process between the lid and silicon substrate to create a designed filtration microfluidic chip with dimension of 28 mm × 7 mm, one inlet port and one outlet port. A pattered silver thin film was deposited on a silicon sample by the lift-off method. Subsequently the newly fabricated sample was anisotropically etched by Bosch DRIE process. Som… Show more

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Cited by 4 publications
(2 citation statements)
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“…The 100‐μm‐thick copper layer of the loop antenna was created by electroplating into the seed‐layer‐deposited grooves on the stent in an acidic bath comprised of 0.4 mol L −1 of copper sulfate and 1 mol L −1 of sulfuric acid (this particular form of concentrations is known to be well suited for copper electroplating on a flexible substrate [ 49 ] ). The straightened stent was placed in front of the counter electrode in the bath so that the plane containing the two grooves was in parallel with the electrode plane.…”
Section: Methodsmentioning
confidence: 99%
“…The 100‐μm‐thick copper layer of the loop antenna was created by electroplating into the seed‐layer‐deposited grooves on the stent in an acidic bath comprised of 0.4 mol L −1 of copper sulfate and 1 mol L −1 of sulfuric acid (this particular form of concentrations is known to be well suited for copper electroplating on a flexible substrate [ 49 ] ). The straightened stent was placed in front of the counter electrode in the bath so that the plane containing the two grooves was in parallel with the electrode plane.…”
Section: Methodsmentioning
confidence: 99%
“…However, such processing can cause variations by as much as 10 µm [ 14 , 15 , 16 ], which is unsuitable when the required precision is on the order of microns. One option for processing that can be realized with high precision and a high aspect ratio is deep reactive ion etching (DRIE) of silicon [ 17 , 18 , 19 , 20 ], used in anisotropic processing. DRIE is widely employed for producing dynamic random-access memories (DRAMs) and other devices.…”
Section: Introductionmentioning
confidence: 99%