2022
DOI: 10.1007/s12541-022-00717-z
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Fabrication Methods for Microscale 3D Structures on Silicon Carbide

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Cited by 17 publications
(2 citation statements)
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“…Molten KOH is the only chemical method for etching SiC at room temperature. KOH etching can only be used for defect characterization of SiC materials due to its inhomogeneity and inefficiency of molten, and it cannot be used for the micromachining of SiC [6][7][8][9][10][11][12]. High-energy dry etching methods, such as inductively coupled plasma etching, are commonly used for SiC micromachining.…”
Section: Introductionmentioning
confidence: 99%
“…Molten KOH is the only chemical method for etching SiC at room temperature. KOH etching can only be used for defect characterization of SiC materials due to its inhomogeneity and inefficiency of molten, and it cannot be used for the micromachining of SiC [6][7][8][9][10][11][12]. High-energy dry etching methods, such as inductively coupled plasma etching, are commonly used for SiC micromachining.…”
Section: Introductionmentioning
confidence: 99%
“…As the tool material, polycrystalline diamond (PCD) was used. Since PCD has a high hardness, it is suitable as a tool material for machining brittle materials such as glass, ceramics, cemented carbide and silicon carbide [ 17 ]. In this experiment, a microgrinding tool with a diameter of 300 µm fabricated via WEDG was used.…”
Section: Methodsmentioning
confidence: 99%