Fabrication method of GaN template for high-speed chemical lift-off

Jeong, Woo Seop; Ahn, Min Joo; Ko, Hyun-A; Shim, Kyu-yeon; Kang, Seongho; Kim, Hwayoung; Kim, Dae-sik; Jhin, Junggeun; Byun, Dongjin

doi:10.1063/5.0138850

Cited by 2 publications

(1 citation statement)

References 15 publications

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“…The fabrication of a GaN template with an air-tunnel structure for a rapid CLO process was investigated in our previous study. Jeong et al [27] introduced a structural design for the CLO process using a sacrificial layer and relatively complex processes such as oxygen plasma treatment and ex situ sacrificial layer deposition.…”

Section: Introductionmentioning

confidence: 99%

Effective Chemical Lift-Off for Air-Tunnel GaN on a Trapezoid-Patterned Sapphire Substrate

et al. 2023

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We fabricated an air-tunnel structure between a gallium nitride (GaN) layer and trapezoid-patterned sapphire substrate (TPSS) through the in situ carbonization of a photoresist layer to enable rapid chemical lift-off (CLO). A trapezoid-shaped PSS was used, which is advantageous for epitaxial growth on the upper c-plane when forming an air tunnel between the substrate and GaN layer. The upper c-plane of the TPSS was exposed during carbonization. This was followed by selective GaN epitaxial lateral overgrowth using a homemade metal organic chemical vapor deposition system. The air tunnel maintained its structure under the GaN layer, whereas the photoresist layer between the GaN layer and TPSS disappeared. The crystalline structures of GaN (0002) and (0004) were investigated using X-ray diffraction. The photoluminescence spectra of the GaN templates with and without the air tunnel showed an intense peak at 364 nm. The Raman spectroscopy results for the GaN templates with and without the air tunnel were redshifted relative to the results for free-standing GaN. The CLO process using potassium hydroxide solution neatly separated the GaN template with the air tunnel from the TPSS.

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Section: Introductionmentioning

confidence: 99%

Effective Chemical Lift-Off for Air-Tunnel GaN on a Trapezoid-Patterned Sapphire Substrate

et al. 2023

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Semiconductor Membrane Exfoliation: Technology and Application

Chang,

Jia,

Park

et al. 2024

Adv Elect Materials

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Flexible semiconductor film‐based optoelectronic devices have garnered significant attention in emerging fields such as the Internet of Things (IoT), wearable devices, and smart healthcare due to their wide range of applications. It is challenging to directly grow the foundational materials of optoelectronic devices, specifically semiconductor thin film structures, on flexible substrates. Instead, they are typically fabricated on conventional rigid thick semiconductor substrates. Consequently, the exfoliation and transfer of epitaxial semiconductor thin film structures onto substrates constitute pivotal steps in the production of flexible optoelectronic devices. The integration of hard inorganic semiconductor materials with flexible substrates offers a solution to the limitations of rigidity and brittleness associated with conventional optoelectronic devices and can be used to address challenges from design to manufacturing. This review provides a comprehensive overview of the working principles and recent advances of various techniques aimed at achieving the membrane exfoliation and transfer of semiconductor structures on conventional rigid substrates. It also reviews the possible applications of the transferred membrane in a variety of optoelectronic devices. Finally, it offers insights into the potential of high‐end semiconductor manufacturing and flexible semiconductor devices to play a critical role in advancing next‐generation optoelectronics technologies.

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Fabrication method of GaN template for high-speed chemical lift-off

Cited by 2 publications

References 15 publications

Effective Chemical Lift-Off for Air-Tunnel GaN on a Trapezoid-Patterned Sapphire Substrate

Effective Chemical Lift-Off for Air-Tunnel GaN on a Trapezoid-Patterned Sapphire Substrate

Semiconductor Membrane Exfoliation: Technology and Application

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