Fabrication and Testing of 4H-SiC MESFETs for Analog Functions Circuits

Devie, Arnaud; Tournier, Dominique; Godignon, P.; Vellvehı́, M.; Montserrat, J.; Jordà, X.

doi:10.4028/www.scientific.net/msf.645-648.1159

Cited by 8 publications

(10 citation statements)

References 5 publications

(3 reference statements)

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“…The fabrication of 4H-SiC MESFET transistor using mesa isolation was already reported in [2] as having a proper behavior up to an ambient of 200ºC. In our previous work [3 were reported results up to 300ºC.…”

Section: Mesa Isolationmentioning

confidence: 96%

Comparison between mesa isolation and p+ implantation isolation for 4H-SiC MESFET transistors

Alexandru

Banu

Vellvehı́

et al. 2011

CAS 2011 Proceedings (2011 International Semiconductor Conference)

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Silicon Carbide (SiC) is considered the wide band gap semiconductor material that can presently compete with silicon (Si) material for power switching devices. Progresses in the manufacturing of high quality SiC substrates open the possibility to new circuit applications. SiC unipolar transistors, such as JFETs and MESFETs have also a promising potential for digital integrated circuits operating at high temperature and/or in harsh environments. An increasing demand for high temperature compliant circuits comes from intelligent power management, automotive industry, and intelligent sensors for harsh environment, space and aerospace as well. Mesa isolation is a widely used isolation technique for the definition of individual devices due to its simplicity as fabrication process [1]. It is mostly used for the protection of high power devices. The junction isolation is widely used for bipolar, Bi-CMOS integrated circuits (IC) and can be achieved by diffusion or implantation process.The present work is presenting the experimental comparison between the mesa isolation process and p+ implantation junction isolation for 4H-SiC MESFET transistors.

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Section: Mesa Isolationmentioning

confidence: 96%

Comparison between mesa isolation and p+ implantation isolation for 4H-SiC MESFET transistors

Alexandru

Banu

Vellvehı́

et al. 2011

CAS 2011 Proceedings (2011 International Semiconductor Conference)

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“…With the mesa isolation technique, the 4H-SiC MESFETs have shown a proper behavior up to 300ºC [2]. This method has proved to assure a good isolation between devices and it is widely used for individual device definition due to its simplicity [3].…”

Section: The 4h-sic Device Librarymentioning

confidence: 98%

“…Therefore, some important and novel design and fabrication features have been considered in the development of the new structure: a) the P + -implanted walls isolation technique which, to our knowledge, has been utilized in SiC for the first time; b) the transistor layout approach (finger-gate), which is typically used in the Si-CMOS ICs; and c) the process flow is fully compatible with CMOS processes. The groundwork of the new planar-MESFET mainly relies on the electrical and geometrical analysis of the already fabricated mesa-MESFET [2].…”

Section: The 4h-sic Normally-on Planar-mesfetmentioning

confidence: 99%

Monolithic Integration of High Temperature Silicon Carbide Integrated Circuits

et al. 2013

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This paper deals with the design, the fabrication and the characterization of SiC ICs able to work at high temperature. The key SiC device is a planar MESFET specially designed for high temperature and high integration density. The other element required for integrating the basic cells library is a SiC resistor built in the same epilayer than the MESFET. Our preference for the MESFET is due to the already proved temperature stability of its Tungsten-Schottky barrier. The SPICE models of these two components are based on experimental measurements in the 25ºC-300ºC temperature range. The process technology setup is also analyzed, which contains three metal levels fully compatible with a standard CMOS technology. The digital library allows implementing multi-stage logic embedded in power management circuitry. The fabrication and the testing of the elementary logic gates library are also analyzed at high temperature and high frequencies. Furthermore, the standard CMOS topologies can be transferred to various Flip-Flops based on 4H-SiC MESFET basic logic gates. The multi-stage SiC ICs show a similar behavior as the logic gates at room and high temperatures, and at high frequency. The functionality of multi-stage SiC ICs has been proved.

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“…Figure 2 shows the singular planar-MESFET layout (m=1), where the P + -implanted isolation (the red ring) can be observed. The gate electrode ratio W G /L G for the novel device is 48μm/8μm, being roughly 1/10 of the mesa-MESFETs [4]. However, the embraced geometry presents a built-in drain-to-source residual current at the ends of the metal finger-gate.…”

Section: B Transistor Layout Design and Device Scalabilitymentioning

confidence: 99%

“…The method used so far for SiC JFET and MESFET isolation is the mesa-etching technique [1,4], thanks to its well-known simplicity [5]. However, using this technique it becomes difficult to ensure reliable interconnections between devices, due to the non-planarity caused by the mesa-etch process.…”

Section: A P + -Implanted Walls Isolation Techniquementioning

confidence: 99%

4H-SiC MESFET specially designed and fabricated for high temperature integrated circuits

Alexandru

Banu

Godignon

et al. 2013

2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC)

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Due to its wide bandgap, 4H-SiC is a potential candidate for developing devices capable to operate at elevated temperatures. Nowadays there is an increasing demand for high temperature circuits for drivers of SiC switches applicable to intelligent power management, automotive industry, intelligent sensors for harsh environment, space and aerospace among others. This paper is presenting high temperature experimental results in the 25ºC-300ºC temperature range of the 4H-SiC planar-MESFET specially designed and fabricated for high density SiC integrated circuits implementation.

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Fabrication and Testing of 4H-SiC MESFETs for Analog Functions Circuits

Cited by 8 publications

References 5 publications

Comparison between mesa isolation and p+ implantation isolation for 4H-SiC MESFET transistors

Comparison between mesa isolation and p+ implantation isolation for 4H-SiC MESFET transistors

Monolithic Integration of High Temperature Silicon Carbide Integrated Circuits

4H-SiC MESFET specially designed and fabricated for high temperature integrated circuits

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Fabrication and Testing of 4H-SiC MESFETs for Analog Functions Circuits

Cited by 8 publications

References 5 publications

Comparison between mesa isolation and p&#x002B; implantation isolation for 4H-SiC MESFET transistors

Comparison between mesa isolation and p&#x002B; implantation isolation for 4H-SiC MESFET transistors

Monolithic Integration of High Temperature Silicon Carbide Integrated Circuits

4H-SiC MESFET specially designed and fabricated for high temperature integrated circuits

Contact Info

Product

Resources

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Comparison between mesa isolation and p+ implantation isolation for 4H-SiC MESFET transistors

Comparison between mesa isolation and p+ implantation isolation for 4H-SiC MESFET transistors