Fabrication and study of electrical properties of boron-silicon compounds with high boron concentration

Armas, B.; Combescure, C.; Dusseau, Jean-Michel; Lepetre, T P; Robert, Jean-Louis; Pistoulet, B.

doi:10.1016/0022-5088(76)90088-6

Cited by 42 publications

(3 citation statements)

References 3 publications

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“…In the Si-B system, the boron-rich composition has drawn a wide attention among researchers in recent years due to its advantages for high-temperature thermoelectric materials [15]. Several studies have dealt with the thermodynamic properties of the Si-B system [16][17][18][19][20][21][22].…”

Section: Thermodynamic Stability Of Si-b Systemmentioning

confidence: 99%

A Review of Boron-Rich Silicon Borides Basedon Thermodynamic Stability and Transport Properties of High-Temperature Thermoelectric Materials

Imam

Reddy

2018

High Temperature Materials and Processes

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In this study, the performance of a boron-rich Si-B system containing ~ 2–25 mol% Si is reviewed as a high-temperature thermoelectric material. In this review, both thermodynamic stability and transport properties are evaluated to understand the high-temperature thermoelectric performance of the Si-B system. The thermodynamic properties, such as Gibbs energy and activity coefficient, of the Si-B system were calculated and compared to the literature data. Thermoelectric properties such as Seebeck coefficient, electrical conductivity, and thermal conductivity were reviewed for the Si-B system. It is found that the composition and processing techniques are critical for obtaining higher thermoelectrical properties and thus also true for the figure of merit ZT. The entropy (degree of randomness) of a system has a remarkable effect on ZT. The highest ZT obtained for this system is approximately 0.2 at 90% B (SiB6 + SiBn) containing SiBn phase, shows the lowest entropy (~32 J/mol*K) in this system at 1100 K.

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Section: Thermodynamic Stability Of Si-b Systemmentioning

confidence: 99%

A Review of Boron-Rich Silicon Borides Basedon Thermodynamic Stability and Transport Properties of High-Temperature Thermoelectric Materials

Imam

Reddy

2018

High Temperature Materials and Processes

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“…Borides have attracted much attention in both fundamental science and industrial applications owing to their potential superconducting, superhard, thermoelectric, and refractory properties [1][2][3][4][5][6][7][8][9][10][11][12]. These diverse properties are related to a wide variety of structures and boron arrangements in borides (ranging from isolated boron atoms to complex polyhedron) [1][2][3].…”

Section: Introductionmentioning

confidence: 99%

Prediction of superconductivity in pressure-induced new silicon boride phases

et al. 2020

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The crystal structures and properties of boron-silicon (B-Si) compounds under pressure have been systematically explored using particle swarm optimization structure prediction method in combination with first-principles calculations. Three new stoichiometries, B 2 Si, BSi, and BSi 2 , are predicted to be stable gradually under pressure, where increasing pressure favors the formation of silicon rich B-Si compounds. In the boron-rich compounds, the network of boron atoms changes from B 12 icosahedron in the ambient phases to the similar buckled graphenelike layers in the high-pressure phases, which crystalize in the same P3m1 symmetry but with different numbers of boron layers between adjacent silicon layers. Phonon calculations show that these structures might be retained to ambient conditions as metastable phases. Further electron-phonon coupling calculations indicate that the high-pressure phases of boron-rich compounds might superconduct at 1 atm, with the highest T c value of 21 K from the Allen-Dynes equation in P3m1 B 2 Si, which is much higher than the one observed in boron doped diamond-type silicon. Moreover, further fully anisotropic Migdal-Eliashberg calculations indicate that B 2 Si is a two-gap anisotropic superconductor and the estimated T c might reach up to 30 K at 1 atm. On the silicon-rich side, BSi 2 is predicted to be stable in the CuAl 2 -type structure. Our current results significantly enrich the phase diagram of the B-Si system and will stimulate further experimental study.

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“…[1][2][3][4] Boron-silicon compounds have attracted tremendous attention in the last decades owing to their potential applications in microelectronics, optoelectronics, and solar cells. [5][6][7][8][9][10][11][12][13][14] First-principles calculations suggested that the Si atoms in silicon compounds doped with boron can adopt sp 2 hybridization to form graphene-like honeycomb structures with metallic properties, 15 and boron doped cubic silicon can possess superconducting properties owing to the phonon-mediated Bardeen-Cooper-Schrieffer (BCS)-type mechanisms. 16 Because of the importance of boron-silicon compounds, silicon clusters doped with single or multiple B atoms have received considerable attention from both experimental and theoretical points of view.…”

Section: Introductionmentioning

confidence: 99%

Structural evolution and bonding properties of BSin−/ (n = 4–12) clusters: Size-selected anion photoelectron spectroscopy and theoretical calculations

Cao

et al. 2018

The Journal of Chemical Physics

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Size-selected anion photoelectron spectroscopy and theoretical calculations were used to investigate the structural evolution and bonding properties of BSi n −/0 (n = 4-12) clusters. The results showed that the B atom in BSi 4-12 −/0 prefers to occupy the high coordination sites to form more B-Si bonds. The lowest-lying isomers of BSi 4-7 −/0 primarily adopt bowl-shaped based geometries, while those of BSi 8-12 −/0 are mainly dominated by prismatic based geometries. For anionic clusters, BSi 11 − is the critical size of the endohedral structure, whereas BSi n neutrals form the B-endohedral structure at n = 9. Interestingly, both anionic and neutral BSi 11 have a D 3h symmetric tricapped tetragonal antiprism structure with the B atom at the center and exhibit 3D aromaticity. The BSi 11 − anion possesses σ plus π doubly delocalized bonding characters. The natural population analysis charge distributions on the B atom are related with the structural evolution of BSi n − and the B-Si interactions.

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Fabrication and study of electrical properties of boron-silicon compounds with high boron concentration

Cited by 42 publications

References 3 publications

A Review of Boron-Rich Silicon Borides Basedon Thermodynamic Stability and Transport Properties of High-Temperature Thermoelectric Materials

A Review of Boron-Rich Silicon Borides Basedon Thermodynamic Stability and Transport Properties of High-Temperature Thermoelectric Materials

Prediction of superconductivity in pressure-induced new silicon boride phases

Structural evolution and bonding properties of BSin−/ (n = 4–12) clusters: Size-selected anion photoelectron spectroscopy and theoretical calculations

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