Fabrication and some applications of large-area silicon field emission arrays

Thomas, R.N.; Wickstrom, R.A.; Schroder, D. K.; Nathanson, H.C.

doi:10.1016/0038-1101(74)90063-x

Cited by 84 publications

(19 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The lamp ͑1 W͒ was placed at a distance of about 1 cm from the sample. The emission is significantly light sensitive in agreement with the results of Thomas et al 29 and Kanemaru et al 14 The current increase cannot be ascribed to the heating effect since the response time was too fast; furthermore, heating of the the whole vacuum chamber applied by an external heater did not lead to detectable changes in the characteristics. No significant changes have been found in the I-V characteristics for negative voltages ͑emission from the metal͒.…”

Section: I-v Characteristicssupporting

confidence: 90%

Fabrication of a silicon-vacuum field-emission microdiode with a moving anode

Bruschi¹

1998

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

A vacuum microdiode with a moving anode was fabricated by means of a new process requiring only two mask levels and only one critical etching step. The cathode, with a pyramidal shape, was made by anisotropically etching p silicon through a mask formed by the anode itself, which, at the end of the process, consists of a SiO2 suspended membrane supporting an Al layer. The process is compatible with standard complementary metal-oxide-semiconductor technology. I-V characteristics were measured under vacuum verifying also that the diode current is sensitive to visible light irradiation and to changes of the anode-to-cathode distance. A minimum anode-cathode distance of about 5000 Angstrom was obtained. (C) 1998 American Vacuum Society. [S0734-211X(98)03902-X]

show abstract

Section: I-v Characteristicssupporting

confidence: 90%

Fabrication of a silicon-vacuum field-emission microdiode with a moving anode

Bruschi¹

1998

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

show abstract

“…In particular, the work of Thomas, and Schroder et al, 6 Thomas et al, 14 and Thomas and Nathanson 15 Nathanson, 3 demonstrates clearly, as a function of temperature and light intensity, the occurrance of a plateau region, where the emission current is independent of extraction voltage. No measurements on microscopic individual silicon tips have been performed to date.…”

Section: A I-v Characteristicsmentioning

confidence: 96%

Fabrication and characterization of p-type silicon field-emitter arrays for lithography

Teepen

Veen

Spijker

et al. 2005

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

p-doped silicon field emitters were studied experimentally to assess their usefulness in multibeam electron lithography. Both individual emitters and emitter arrays were fabricated from single crystal Si wafers with several doping levels. Current-voltage curves were measured for different temperatures and illumination conditions. The typical plateaus in the I-V curves and the sensitivity to light known from the literature were reproduced. Stability measurements showed a very stable total emission current even while the angular emission distribution fluctuated strongly, giving unstable currents in apertured beams. Measured light response times varied between 34 ns and 20 µs, depending on experimental conditions. It was found that in the plateau of the I-V curve, the energy of the electrons shifts over up to 100 eV when changing the extraction voltage over a few kilovolts. In operation, when the current is stable, the energy shift is rather unstable. The experimental results are discussed within a model of the emission process involving an induced p-n junction inside the tip. The conclusion is that p-doped silicon field emitters are not particularly useful for applications in electron beam lithography.

show abstract

“…The structure consisted of emitters, gates, and collectors on the same planar surface of a silicon wafer and exhibited both voltage and power gains with a transit time of only 5 ps from the emitter to the collector. This was a fine example of the use of state-ofthe-art silicon fabrication technology in building advanced vacuum microelectronic devices [28,29]. In addition to the great variety of available fabrication techniques, the I -V characteristics of semiconductor-FEAs could be made different from those of metal-FEAs.…”

Section: Invention Of Spindt Cathodementioning

confidence: 99%

Historical Overview

Utsumi¹

2001

Vacuum Microelectronics

View full text Add to dashboard Cite

Fabrication and some applications of large-area silicon field emission arrays

Cited by 84 publications

References 15 publications

Fabrication of a silicon-vacuum field-emission microdiode with a moving anode

Fabrication of a silicon-vacuum field-emission microdiode with a moving anode

Fabrication and characterization of p-type silicon field-emitter arrays for lithography

Historical Overview

Contact Info

Product

Resources

About