Fabrication and reliability evaluation of Yb0.3Co4Sb12/Mo–Ti/Mo–Cu/Ni thermoelectric joints

Fan, Xin‐Heng; Gu, Meng; Shi, Xun; Chen, Lidong; Bai, Shengqiang; Nunna, Raghavendra

doi:10.1016/j.ceramint.2015.02.083

Cited by 34 publications

(20 citation statements)

References 17 publications

(18 reference statements)

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“…Increasing the aging temperature to 600 • C and 650 • C, the contact resistivity reaches 6.8 µΩ·cm 2 and 10 µΩ·cm 2 after 41 days and nine days, respectively. In contrast to the previous reports [26,[29][30][31], the stability of the contact resistivity of the Ti/Mo/Yb 0.3 Co 4 Sb 12 joints is significantly improved.…”

Section: Diffusion Kinetics Of the Interfacecontrasting

confidence: 52%

“…Therefore, the diffusion kinetics and life prediction were also not studied. Afterwards, Fan et al designed a Ti-Mo mixture as the barrier layer for the n-type Yb 0.3 Co 4 Sb 12 matrix and found that the dispersion of the chemically stable Mo particles (≤15 at %) disturbs the inter-diffusion between the Ti and Yb 0.3 Co 4 Sb 12 matrix, which results in an improved interfacial stability at 550 • C. Still, the diffusion kinetics and life prediction were not studied [31]. Besides, Bae et al studied the stability of the power generation characteristics of the Mo-Cu/Ti/SKD joints in terms of vibration and thermal cycling, and found that Ti helps to achieve good interfacial bonding [32].…”

Section: Introductionmentioning

confidence: 99%

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Study on the High Temperature Interfacial Stability of Ti/Mo/Yb0.3Co4Sb12 Thermoelectric Joints

Bai

Xia

et al. 2017

Applied Sciences

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Abstract:To improve the interfacial stability at high temperatures, n-type skutterudite (SKD) thermoelectric joints with sandwich structures of Ti/Mo/Yb 0.3 Co 4 Sb 12 were successfully designed and fabricated. In this structure, Mo and Ti were introduced as the barrier layer with the goal of suppressing the interfacial diffusion and the buffer layer with the goal of enhancing the bonding strength, respectively. To evaluate the high temperature interfacial behavior of the Ti/Mo/Yb 0.3 Co 4 Sb 12 joints, thermal shocking between 0 • C and 600 • C and isothermal aging at a temperature range of 550 • C to 650 • C were carried out in vacuum. During the isothermal aging process, Ti penetrates across the Mo layer, and finally diffuses into the Yb 0.3 Co 4 Sb 12 matrix. By increasing the isothermal aging time, Ti continuously diffuses and reacts with the elements of Sb and Co in the matrix, consequently forming the multilayer-structured intermetallic compounds of Ti 3 Sb/Ti 2 Sb/TiCoSb. Diffusion kinetics was investigated and it was found that the interfacial evolution of the Ti/Mo/Yb 0.3 Co 4 Sb 12 joints was a diffusion-controlling process. During the diffusion process, the formed Mo-Ti buffer layer acts as a damper, which greatly decelerates the diffusion of Ti towards the Yb 0.3 Co 4 Sb 12 matrix at high temperatures. Meanwhile, it was found that the increase in the contact resistivity of the joints mainly derives from the inter-diffusion between Ti and Yb 0.3 Co4Sb 12 . As a result, the Ti/Mo/Yb 0.3 Co 4 Sb 12 joint demonstrates the excellent stability of the interfacial contact resistivity. Service life prediction was made based on the stability of the contact resistivity, and it was found that the Ti/Mo/Yb 0.3 Co 4 Sb 12 joint is qualified for practical applications at 550 • C.

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Section: Diffusion Kinetics Of the Interfacecontrasting

confidence: 52%

Section: Introductionmentioning

confidence: 99%

Study on the High Temperature Interfacial Stability of Ti/Mo/Yb0.3Co4Sb12 Thermoelectric Joints

Bai

Xia

et al. 2017

Applied Sciences

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“…One strategy is to form a diffusion barrier layer on the substrate surface prior to Sb 2 Te 3 depostion [34,35].…”

Section: A C C E P T E D Accepted Manuscriptmentioning

confidence: 99%

Effect of thermal annealing on the structural and thermoelectric properties of electrodeposited antimony telluride thin films

Hatsuta

Takemori

Takashiri

2016

Journal of Alloys and Compounds

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Please cite this article as: N. Hatsuta, D. Takemori, M. Takashiri, Effect of thermal annealing on the structural and thermoelectric properties of electrodeposited antimony telluride thin films, Journal of Alloys and Compounds (2016), ABSTRACTWe investigated the effect of thermal annealing on structural and thermoelectric properties of p-type antimony telluride (Sb 2 Te 3 ) thin films fabricated on a stainless steel (SUS304) substrate by electrodeposition. Antimony telluride thin films were annealed for 1 h at temperatures between 200 and 400°C. We observed that the as-deposited thin film and thin films annealed at temperatures less than 250°C possessed a stoichiometric atomic composition (Sb:Te = 40:60) with no impurities from the substrate. At the annealing temperature of 300°C, we observed a certain amount of impurities (Fe, Cr, Ni) in the thin film. The Seebeck coefficient was decreased but the electrical conductivity was increased for films treated at 300°C. As a result, the thin film exhibited a maximum power factor of 13.6 µW/(cm·K 2 ). On further increasing the annealing temperature to 400°C, the film structure and thermoelectric properties were drastically changed. The impurity concentration in the thin film reached approximately 50 at%. The crystal structure of Sb 2 Te 3 completely disappeared, and instead, other chemical compounds formed by alloying the elements of the thin film and the substrate were observed.

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“…Several reports can be found regarding the use of early transition 40 metal elements (mainly Ti) as diffusion barrier for TE skutterudites and Ni,Cu electrodes. 13,14 In our attempts to explore the potential of group V transition metals (V, Nb, Ta) as barriers, diffusion zone experiments between Ba-filled skutterudite Ba 0.3 Co 4 Sb 12 and (V,Nb,Ta) revealed the formation of a novel 45 ternary compound with vanadium, the formula of which being close to a 5-12-20 stoichiometry (see Figure 1; for details on the binary phase diagrams {V,Nb,Ta}-Sb see ref. 15 ).…”

Section: Introductionmentioning

confidence: 99%

Ba₅{V,Nb}₁₂Sb_19+x, novel variants of the Ba₅Ti₁₂Sb_19+x-type: crystal structure and physical properties

Failamani

Grytsiv

Giester

et al. 2015

Phys. Chem. Chem. Phys.

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The novel compounds Ba5{V,Nb}12Sb19+x, initially found in diffusion zone experiments between Ba-filled skutterudite Ba0.3Co4Sb12 and group V transition metals (V,Nb,Ta), were synthesized via solid state reaction and were characterized by means of X-ray (single crystal and powder) diffraction, electron probe microanalysis (EPMA), and physical (transport and mechanical) properties measurements. Ba5V12Sb19.41 (a = 1.21230(1) nm, space group P4[combining overline]3m; RF(2) = 0.0189) and Ba5Nb12Sb19.14 (a = 1.24979(2) nm, space group P4[combining overline]3m; RF(2) = 0.0219) are the first representatives of the Ba5Ti12Sb19+x-type, however, in contrast to the aristotype, the structure of Ba5V12Sb19.41 shows additional atom disorder. Temperature dependent ADPs and specific heat of Ba5V12Sb19.41 confirmed the rattling behaviour of Ba1,2 and Sb7 atoms within the framework built by V and Sb atoms. Electrical resistivity of both compounds show an upturn at low temperature, and a change from p- to n-type conductivity above 300 K in Ba4.9Nb12Sb19.4. As expected from the complex crystal structure and the presence of defects and disorder, the thermal conductivity is suppressed and lattice thermal conductivity of ∼0.43 W m(-1) K(-1) is near values typical for amorphous systems. Vicker's hardness of (3.8 ± 0.1) GPa (vanadium compound) and (3.5 ± 0.2) GPa (niobium compound) are comparable to Sb-based filled skutterudites. However, the Young's moduli measured by nanoindentation for these compounds EI(Ba4.9V12Sb19.0) = (85 ± 2) GPa and EI(Ba4.9Nb12Sb19.4) = (79 ± 5) GPa are significantly smaller than those of skutterudites, which range from about 130 to 145 GPa.

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Fabrication and reliability evaluation of Yb0.3Co4Sb12/Mo–Ti/Mo–Cu/Ni thermoelectric joints

Cited by 34 publications

References 17 publications

Study on the High Temperature Interfacial Stability of Ti/Mo/Yb0.3Co4Sb12 Thermoelectric Joints

Study on the High Temperature Interfacial Stability of Ti/Mo/Yb0.3Co4Sb12 Thermoelectric Joints

Effect of thermal annealing on the structural and thermoelectric properties of electrodeposited antimony telluride thin films

Ba₅{V,Nb}₁₂Sb_19+x, novel variants of the Ba₅Ti₁₂Sb_19+x-type: crystal structure and physical properties

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Fabrication and reliability evaluation of Yb0.3Co4Sb12/Mo–Ti/Mo–Cu/Ni thermoelectric joints

Cited by 34 publications

References 17 publications

Study on the High Temperature Interfacial Stability of Ti/Mo/Yb0.3Co4Sb12 Thermoelectric Joints

Study on the High Temperature Interfacial Stability of Ti/Mo/Yb0.3Co4Sb12 Thermoelectric Joints

Effect of thermal annealing on the structural and thermoelectric properties of electrodeposited antimony telluride thin films

Ba5{V,Nb}12Sb19+x, novel variants of the Ba5Ti12Sb19+x-type: crystal structure and physical properties

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Product

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Ba₅{V,Nb}₁₂Sb_19+x, novel variants of the Ba₅Ti₁₂Sb_19+x-type: crystal structure and physical properties