Fabrication and properties of AgInTe2 thin films

Growth, structure and thermal properties of CuAlxGa1‐xSe2 alloys

“…The values of a, c and c/a, shown in table 1, were calculated by the least-squares fit method [13,14]. The calculated values of a and c for the end compositions are in good agreement with those reported by other authors [4,[15][16][17][18].…”

“…Among the ternary semiconductors I-III-VI 2 , the CuInSe 2 and the CuGaSe 2 , and their solid solutions, have been broadly studied because they possess a high absorption coefficient [1] and their energy gaps of 1 eV [2] and 1.7 eV [3], respectively, are near to the optimum range for the conversion of solar energy. Regrettably, the Cu-III-VI 2 semiconductor alloys with wide gap, as CuAlSe 2 (2.6 eV) [4], CuGaS 2 (2.49 eV) [5] and CuAlS 2 (3.49 eV) [6], have been little studied in spite of being considered useful materials with attractive characteristics for applications in opto-electronic devices, since they cover a wide range of energy gaps and lattice parameters [7][8][9][10][11].…”

Positive temperature variation of the bandgap energy in AgGaSe2

“…with X 1 = −1.3 × 10 -5 K -1 , θ 1 = 80 K, X 2 = 1.7 × 10 -5 K -1 , θ 2 = 200 K, X 3 = 0.4 × 10 -5 K -1 , and θ 3 = 900 K. The solid circles in Fig. 3b correspond to the experimental α th = (α || + 2α ⊥ )/3 data measured by Bodnar and Orlova [15]. The γ (T) values plotted in Fig.…”

Nanoscale AgInTe2/Si Truncated Quasitetrahedrons for Heterostructured Photodetectors

“…Among the various ternary chalcopyrite-structured semiconductors, AgInTe 2 has a narrow band gap of 1.0 eV, which possesses a high optical absorption coefficient of 10 4 –10 5 cm –1 at room temperature. , In view of its intrinsic structures and properties, AgInTe 2 is a promising candidate for fabricating electronic and photoelectronic devices especially in the near-infrared (NIR) regions. As typically reported, it has been investigated as potential rewritable data-storage media among the Te-based phase-change materials , and has been utilized as an absorber layer in photovoltaic cells to improve the energy conversion efficiency. , Moreover, AgInTe 2 and its alloyed solid-state solutions and/or composites including the examples of Ag 3.4 In 3.7 Sb 76.4 Te 16.5 , etc.…”

“…As reported, polycrystalline AgInTe 2 films have been initially grown by direct fusion of high-purity elements in a quartz tube at a high reaction temperature over 700 °C for a long time. ,,,, Meanwhile, AgInTe 2 thin films were also reported via pulsed-laser deposition on glass substrates at temperature from 750 to 780 K, displaying potential for photovoltaic applications . However, among the typical ternary chalcopyrite-structured semiconductors, AgInTe 2 has been less investigated compared to their corresponding sulfide and selenide counterparts due to the comparably difficult preparation under relatively mild conditions, especially at low reaction temperatures below 300 °C.…”