Fabrication and piezoresponse of electrospun ultra-fine Pb(Zr0.3, Ti0.7)O3 nanofibers

Fan, Meng; Hui, Wenyuan; Liu, Zhidong; Shen, Zhenkui; Li, Hui; Jiang, Anquan; Chen, Yifang; Liu, Ran

doi:10.1016/j.mee.2012.07.026

Cited by 24 publications

(13 citation statements)

References 11 publications

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“…4c) of the amplitude-voltage butterfly curve, which is estimated to be 77.17 pm/V. The phase switches about 180 o when the V dc is swept from -15 to 15 V. The electric coercivity voltage of 10.8 V is bigger than that of pure PZT NF (~1.5 V), [10] because the polarization switching process is confined by the surrounded CFO nanocrystals. Fig.…”

Section: Methodsmentioning

confidence: 93%

Variations of local piezoelectricity in multiferroic CoFe2O4–Pb(Zr0.3,Ti0.7)O3 composite nanofibers

Liu

et al. 2015

Materials Letters

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Section: Methodsmentioning

confidence: 93%

Variations of local piezoelectricity in multiferroic CoFe2O4–Pb(Zr0.3,Ti0.7)O3 composite nanofibers

Liu

et al. 2015

Materials Letters

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“…4, d 33 in BTZ-0.5BCT nanostructures exhibits more than 100% enhancement compare to the PZT nanofibers. 21 The reason for the high d 33 values in our nanofibers and thin films is because the BTZ-0.5BCT bulk ceramics exhibit a very large piezoelectric effect compared to other piezoelectric bulks. The large value (d 33 ¼ 1146 pm/V) in the BTZ-0.5BCT bulk ceramics is caused by crystallization in the vicinity of the rhombohedral-cubic-tetragonal critical point (critical triple point) which approaches the MPB region in the BTZ-BCT phase diagram.…”

mentioning

confidence: 90%

“…However, the best piezoelectric response reported for polycrystalline thin films and nanofibers so far has been less than 160 pm V À1 . [12][13][14][15][16][17][18][19][20][21][22][23][24][25][26] Grain boundaries create pinning sites for ferroelectric domain wall motion. A high density of grain boundaries restricts domain walls' mobility in nanostructured materials.…”

mentioning

confidence: 99%

Large piezoelectric coefficient and ferroelectric nanodomain switching in Ba(Ti0.80Zr0.20)O3-0.5(Ba0.70Ca0.30)TiO3 nanofibers and thin films

Jalalian

Grishin

Wang

et al. 2014

Applied Physics Letters

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“…a The imprinted chiral array with the pitch of 4 lm; b the distribution of electric component E 2 on a single chiral element by FDTD simulation; c the light diffraction through chiral array by FDTD simulation, which is the evolution of intensity through the single chiral with that through the hole crystal; d the measured light diffraction pattern through photonic crystals [154,155] polymer, multi-bit data storage was also achieved [189]. Furthermore, 100-nm ultra-fine fibers of PZT/PVP were fabricated by combining sol-gel method with electrospinning technique [190].…”

Section: Hot Embossing On Pztmentioning

confidence: 99%

Applications of nanoimprint lithography/hot embossing: a review

Chen

2015

Appl. Phys. A

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This review concentrates on the applications of nanoimprint lithography (NIL) and hot embossing for the fabrications of nanolectronic devices, nanophotonic metamaterials and other nanostructures. Technical challenges and solutions in NIL such as nanofabrication of templates, removal of residual resist, pattern displacement in thermal NIL arising from thermal expansion are first discussed. In the nanofabrication of templates, dry etch in plasma for the formation of multi-step structures and ultra-sharp tip arrays in silicon, nanophotonic chiral structures with high aspect ratio in SiC are demonstrated. A bilayer technique for nondestructive removal of residual resist in thermal NIL is described. This process is successfully applied for the fabrication of T-shape gates and functional high electron mobility transistors. However, pattern displacement intrinsically existing in thermal NIL/hot embossing owing to different thermal expansions in the template and substrate, respectively, limits its further development and scale-up. Low temperature even room temperature NIL (RTNIL) was then proposed on HSQ, trying to eliminate the pattern distortion by avoiding a thermal loop in the imprint. But, considerable pressure needed in RTNIL turned the major attentions to the development of UVcuring NIL in UV-curable monomers at low temperature. A big variety of applications by low-temperature UV-curing NIL in SU-8 are described, including high-aspect-ratio phase gratings, tagging technology by nanobarcode for DNA sequencing, nanofluidic channels, nanophotonic metamaterials and biosensors. Hot embossing, as a parallel technique to NIL, was also developed, and its applications on ferroelectric polymers as well as metals are reviewed. Therefore, it is necessary to emphasize that this review is mainly attempted to review the applications of NIL/embossing instead of NIL technique advances.

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Fabrication and piezoresponse of electrospun ultra-fine Pb(Zr0.3, Ti0.7)O3 nanofibers

Cited by 24 publications

References 11 publications

Variations of local piezoelectricity in multiferroic CoFe2O4–Pb(Zr0.3,Ti0.7)O3 composite nanofibers

Variations of local piezoelectricity in multiferroic CoFe2O4–Pb(Zr0.3,Ti0.7)O3 composite nanofibers

Large piezoelectric coefficient and ferroelectric nanodomain switching in Ba(Ti0.80Zr0.20)O3-0.5(Ba0.70Ca0.30)TiO3 nanofibers and thin films

Applications of nanoimprint lithography/hot embossing: a review

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