2003
DOI: 10.1016/s0009-2614(03)00582-7
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Fabrication and photoluminescence characteristics of single crystalline In2O3 nanowires

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Cited by 167 publications
(89 citation statements)
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“…Accordingly, the PL spectrum is comprised of two bands, peaking at approximately 2.8 eV in blue region and 2.1 eV in yellow-orange region, respectively. [2], which is attributed to radiative recombination between an electron on V X O and a hole on (V In , V O ) X in the In 2 O 3 nanostructures [1]. Also, the yellow-orange emission (about 2.1 eV) was previously observed from In 2 O 3 nanotowers [3].…”
Section: Resultsmentioning
confidence: 65%
“…Accordingly, the PL spectrum is comprised of two bands, peaking at approximately 2.8 eV in blue region and 2.1 eV in yellow-orange region, respectively. [2], which is attributed to radiative recombination between an electron on V X O and a hole on (V In , V O ) X in the In 2 O 3 nanostructures [1]. Also, the yellow-orange emission (about 2.1 eV) was previously observed from In 2 O 3 nanotowers [3].…”
Section: Resultsmentioning
confidence: 65%
“…The major advantage of this method should lie in its ability to decrease the temperature from 1975 K (which is essential for ZnO powder to melt) to lower than 1000 K: more specifically, its advantage is in its potential for industrial production. This method can possibly be extended to preparation of many other semiconductor nanowires, such as In 2 O 3 [26], SiC [27], SiO 2 [28], Si 3 N 4 [29], etc.…”
Section: Introductionmentioning
confidence: 99%
“…The solid is vaporized through heating, which is transported by a carrier gas that feeds the catalyst and source material for nanowire [31,40] growth. Thermal CVD has been utilized for the growth of a number of IO nanostructures like nanopyramids, nanorods, nanowires, nanobelts and nanotubes filled with indium metal, with good crystalline nature and controlled morphology [29,30]. Li et al [31] has reported the growth of IO nanostructures filled with metallic indium by the heating of In + In 2 O 3 precursor at 1573 K for 30 min, while the Si substrate was held at 973-1073 K. Different morphologies can be obtained by varying the deposition parameters like temperature, pressure, precursor etc.…”
Section: Chemical Vapor Depositionmentioning
confidence: 99%