2017
DOI: 10.1016/j.apsusc.2016.07.104
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Fabrication and photocatalytic activity enhanced mechanism of direct Z-scheme g-C 3 N 4 /Ag 2 WO 4 photocatalyst

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Cited by 627 publications
(163 citation statements)
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“…Among the strategies for improving the photocatalytic performance, constructing heterostructures by coupling g‐C 3 N 4 with another semiconductor with suitable band structure is accepted as a promising way to increase the lifetime of photogenerated charge carriers, improve the charge carrier separation efficiency and even enhance light utilization, and thereby promote the photocatalytic performance . Especially, considering the negative conduction band potential (−1.1 V vs. RHE) of g‐C 3 N 4 , the construction of Z‐scheme photocatalysts by coupling g‐C 3 N 4 with a semiconductor with deep valence band (VB) potential can preserve photogenerated charge carriers with strong redox abilities .…”
Section: Introductionmentioning
confidence: 99%
“…Among the strategies for improving the photocatalytic performance, constructing heterostructures by coupling g‐C 3 N 4 with another semiconductor with suitable band structure is accepted as a promising way to increase the lifetime of photogenerated charge carriers, improve the charge carrier separation efficiency and even enhance light utilization, and thereby promote the photocatalytic performance . Especially, considering the negative conduction band potential (−1.1 V vs. RHE) of g‐C 3 N 4 , the construction of Z‐scheme photocatalysts by coupling g‐C 3 N 4 with a semiconductor with deep valence band (VB) potential can preserve photogenerated charge carriers with strong redox abilities .…”
Section: Introductionmentioning
confidence: 99%
“…56,57 2.2 | Band structure UV-vis diffuse reflection spectrum shows that the bandgap (E g ) of g-C 3 N 4 is experimentally determined to be 2.7 eV. 58,59 The theoretical E g obtained by DFT calculation is heavily dependent on the constructed model and employed functional. Table 1 summarizes the calculated E g of g-C 3 N 4 in various literatures.…”
Section: Introductionmentioning
confidence: 99%
“…1. For as-prepared pure g-C 3 N 4 , the curve exhibits a typical XRD pattern of g-C 3 N 4 , which consists of two characteristic peaks around 13.04° of (100) crystal plane, and 27.36° of (002) crystal plane394041, respectively. All the peaks of pattern b match well with the (101), (103), (004), (112), (200), (105) and (211) reflections of anatase-type TiO 2 (PDF No.…”
Section: Resultsmentioning
confidence: 99%