Fabrication and performance of InAs-based heterojunction bipolar transistors

Thomas, S.; Elliott, K.; Chow, D. H.; Shi, Binqiang; Deelman, Peter W.; Brewer, P. D.; Arthur, A.; Rajavel, R. D.; Fields, C.H.; Madhav, M.

doi:10.1109/iciprm.2003.1205304

Cited by 8 publications

(2 citation statements)

References 5 publications

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“…1,2 The use of strained alloys close in composition to InAs, such as Al x In 1−x As and InAs y P 1−y , adds further flexibility to the design of these devices. 3 Since the base layers of InAs-based heterojunction bipolar transistors are usually less than 50 nm, 3 shallow and thermally stable ohmic contacts are a critical factor for reliable high-speed devices. However, there are no reports available to our knowledge on contacts to p-InAsP, which is of interest for the base of some of these devices.…”

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confidence: 99%

Shallow and Thermally Stable Ohmic Contacts to p-InAsP

Wang

Lysczek

Liu

et al. 2006

J. Electrochem. Soc.

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We have investigated the electrical and metallurgical behavior of ohmic contacts to p-InAs 0.80 P 0.20 . Auger depth profiling reveals that Ru, Ti, and V have better thermal stability against reaction than Pt, Pd, and Ni on p-InAsP. However, contacts with Pd deposited as the first layer exhibit lower specific contact resistances than contacts with Ti, V, Ni, Ru, or Pt as the first layer. For this reason, multilayer contacts were studied, adding Au as the top layer to minimize the metal sheet resistance. Transmission electron microscopy indicates that Pd/Ru/Au contacts aged for 3 days exhibit a uniform and shallow reaction with p-InAsP, with the Pd consuming only 4 nm of the semiconductor and the Ru serving as an effective diffusion barrier. Specific contact resistances of 3.8 ϫ 10 −6 ⍀ cm 2 as deposited and 1.7 ϫ 10 −6 ⍀ cm 2 for contacts aged at 250°C for 90 days in an evacuated quartz tube were measured for the Pd/Ru/Au contacts.

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confidence: 99%

Shallow and Thermally Stable Ohmic Contacts to p-InAsP

Wang

Lysczek

Liu

et al. 2006

J. Electrochem. Soc.

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“…Even higher performance is expected for similar alloys with a lattice constant nearer to 6.3 Å as the InGaSb base would have an even narrower bandgap of $ 0.3 eV. In related work, several groups have recently reported the development of low-power npn HBTs with an InAs base [2][3][4][5].…”

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confidence: 99%