Fabrication and performance comparison of planar and sandwich structures of micro-bolometers with Ge thermo-sensing layer

Moreno, Mario; Kosarev, A.; Torres, Alfonso; Ambrosio, Roberto

doi:10.1016/j.tsf.2006.11.172

Cited by 48 publications

(19 citation statements)

References 4 publications

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“…Today, commonly used thermistor materials such as vanadium oxide (VO x ), amorphous, and polycrystalline semiconductors demonstrate moderate noise levels and TCR values around 2%-4% (Lv, Hu, Wu, & Liu, 2007;Moreno, Kosarev, Torres, & Ambrosio, 2007). Recent studies have proposed single crystalline (sc) SiGe as a thermistor material (Di Benedetto, Kolahdouz, Malm, Ostling, & H. H. Radamson, 2009;Vieider et al, 2007;S.…”

Section: Figures Of Merit For Thermistor Materialsmentioning

confidence: 99%

Group IV Materials for Low Cost and High Performance Bolometers

Radamson¹,

Kolahdouz²

2012

Bolometers

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Section: Figures Of Merit For Thermistor Materialsmentioning

confidence: 99%

Group IV Materials for Low Cost and High Performance Bolometers

Radamson¹,

Kolahdouz²

2012

Bolometers

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“…8 (R th ≈ 2 x 10 6 KW -1 ), we found that both values are very similar, suggesting that both methods are precise in order to calculate the thermal characteristics of the IR detectors. Finally Table 1 shows the performance characteristics of micro-bolometers with different thermo sensing films, where the device presented in this work has the larger detectivty, resulted from its larger responsivity; low noise [7] and its very low thermal conductivity. …”

Section: Temperature Dependence Of Thermal Resistancementioning

confidence: 99%

Measurements of thermal characteristics in silicon germanium un‐cooled micro‐bolometers

Moreno

Ambrosio

Torres

et al. 2010

Phys. Status Solidi (c)

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We present a study of the thermal characteristics of an infrared detector (un‐cooled micro‐bolometer), based on an amorphous silicon germanium film (a‐SixGey:H), deposited by plasma at low temperature (∼ 300 °C) and compatible with the standard CMOS technology. These films have been studied due to their high performance characteristics as high activation energy (Ea≈ 0.37 eV), high temperature coefficient of resistance (TCR≈ ‐0.047 K‐1) and moderate room temperature conductivity (σRT≈ 2x10‐5Ω cm), which provides a moderate pixel resistance (Rcell≈3.5x108Ω). We have used two simple methods to calculate the thermal characteristics of the micro‐bolometer. The thermal conductance (Gth) has been obtained from the electrical I(U) characteristics in the range where self heating due to bias is not presented. The temperature dependence of the electrical resistance and as well the temperature dependence of the thermal resistance have been obtained by measuring the I(U) characteristics in the device at different temperature values. Finally the results of both methods have been compared. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…The TCR value of VO 2 reaches more than 70%/K near the MIT temperature (T MI ), 9 which is more than ten times that of conventional uncooled bolometer materials such as Si or Ge. [10][11][12] However, VO 2 shows a large thermal hysteresis in the ρ-T curve across the MIT. The hysteretic behavior indicates the coexistence of two phases over a finite temperature range due to superheating and supercooling effects, which is a characteristic of the first-order transition.…”

Section: Introductionmentioning

confidence: 98%

Chromium–niobium co-doped vanadium dioxide films: Large temperature coefficient of resistance and practically no thermal hysteresis of the metal–insulator transition

et al. 2016

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We investigated the effects of chromium (Cr) and niobium (Nb) co-doping on the temperature coefficient of resistance (TCR) and the thermal hysteresis of the metal–insulator transition of vanadium dioxide (VO2) films. We determined the TCR and thermal-hysteresis-width diagram of the V1−x−yCrxNbyO2 films by electrical-transport measurements and we found that the doping conditions x ≳ y and x + y ≥ 0.1 are appropriate for simultaneously realizing a large TCR value and an absence of thermal hysteresis in the films. By using these findings, we developed a V0.90Cr0.06Nb0.04O2 film grown on a TiO2-buffered SiO2/Si substrate that showed practically no thermal hysteresis while retaining a large TCR of 11.9%/K. This study has potential applications in the development of VO2-based uncooled bolometers.

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Fabrication and performance comparison of planar and sandwich structures of micro-bolometers with Ge thermo-sensing layer

Cited by 48 publications

References 4 publications

Group IV Materials for Low Cost and High Performance Bolometers

Group IV Materials for Low Cost and High Performance Bolometers

Measurements of thermal characteristics in silicon germanium un‐cooled micro‐bolometers

Chromium–niobium co-doped vanadium dioxide films: Large temperature coefficient of resistance and practically no thermal hysteresis of the metal–insulator transition

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