Fabrication and Optical Property of GaSe Thin Films Grown by Pulsed Laser Deposition

Abstract

The highly oriented (001) GaSe film on c-cut sapphire (0001) was successfully fabricated by pulsed laser deposition. As growth temperature decreases from 550 C to 375 C, the structure of films changes from cubic zinc-blende Ga 2 Se 3 phase to GaSe phase. The growth temperature of the critical transition from Ga 2 Se 3 phase to GaSe phase is around 500 C. From atomic force microscope (AFM) results, it is observed that the growth process of GaSe film is in the manner of layer plus island growth. Besides, the optimal growth conditions of as-grown GaSe film were obtained at a substrate temperature of 400 C and laser energy density of 11.7 J/cm 2 . When the thickness of films goes beyond 800 # A, the stress will be released and the thickness of 1200 # A results in an optimal GaSe film. Furthermore, the indirect bound exciton emission and the recombination via impurity levels or structural defects were observed from low-temperature photoluminescence measurement.

Epitaxial single‐crystal of GaSe epilayers grown on a c‐sapphire substrate by molecular beam epitaxy

“…Therefore, it is difficult to achieve high‐quality hetero‐epitaxy of GaSe. Various methods have been reported for growing GaSe thin films, including metal oxide chemical vapor deposition , vapor deposition , pulsed laser deposition , and molecular beam epitaxy (MBE) . The effect of different substrate is crucial for high‐quality GaSe epitaxial growth.…”

Gallium selenide clusters generated via laser desorption ionisation quadrupole ion trap time‐of‐flight mass spectrometry

“…Due to technological progress, there is a requirement for new materials and thus the synthesis of such materials is an active area of research. In the development of materials based on gallium selenides, several research groups use pulsed laser deposition (PLD) for the generation of the new materials such as GaSe thin films and two‐dimensional Ga‐Se nanosheet networks . Laser chemical vapour deposition (LCVD) is used for the deposition of layers from the gas phase .…”

“…In the development of materials based on gallium selenides, several research groups use pulsed laser deposition (PLD) for the generation of the new materials such as GaSe thin films and two-dimensional Ga-Se nanosheet networks. 28,29 Laser chemical vapour deposition (LCVD) is used for the deposition of layers from the gas phase. 30 Laser pulses are also used to produce nanocompounds such as quantum dots in liquid solutions.…”