Fabrication and optical properties of SnS thin films by SILAR method

Ghosh, B.; Das, M.; Banerjee, Pushan; Das, Subrata

doi:10.1016/j.apsusc.2008.04.008

Cited by 183 publications

(71 citation statements)

References 19 publications

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“…It is clear that the control of the stoichiometry that we have achieved in the syntheses allows for tuning of optical band gaps. The band gaps of SnS films previously reported [44][45][46][47][48] show similar change with sulfur deficiency (Fig. 4b).…”

Section: Resultssupporting

confidence: 52%

A facile method for the production of SnS thin films from melt reactions

et al. 2016

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Tin(II)O-ethylxanthate [Sn(S 2 COEt) 2 ] was prepared and used as a single-source precursor for the deposition of SnS thin films by a melt method. Polycrystalline, (111)-orientated, orthorhombic SnS films with controllable elemental stoichiometries (of between Sn 1.3 S and SnS) were reliably produced by selecting heating temperatures between 200 and 400°C. The direct optical band gaps of the SnS films ranged from 1.26 to 1.88 eV and were strongly influenced by its Sn/S ratio. The precursor [Sn(S 2 COEt) 2 ] was characterized by thermogravimetric analysis and attenuated total reflection Fourier-transform infrared spectroscopy. The as-prepared SnS films were characterized by scanning electron microscopy, energy-dispersive X-ray spectroscopy, powder X-ray diffractometry, Raman spectroscopy, and UV-Vis spectroscopy.

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Section: Resultssupporting

confidence: 52%

A facile method for the production of SnS thin films from melt reactions

et al. 2016

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“…Brought to you by | MIT Libraries Authenticated Download Date | 5/12/18 2:58 AM the higher side of the bulk value (∼1.43 eV) for bulk tin sulphide [19]. The difference in band gap may be attributed to quantum confinement effect arising from lowering of particle size.…”

Section: Resultsmentioning

confidence: 98%

“…The difference in band gap may be attributed to quantum confinement effect arising from lowering of particle size. It has also been reported that the optical band gap varies with tin-to-sulphur ratio in the structure leading to the change in energy band structure and also the density of states (DOS) of valence band and conduction band [19]. Thus, compositional stoichiometry may also contribute to enhanced band gap.…”

Section: Resultsmentioning

confidence: 99%

Structural and optical characteristics of SnS thin film prepared by SILAR

Mukherjee

Mitra

2015

Materials Science-Poland

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SnS thin films were grown on glass substrates by a simple route named successive ion layer adsorption and reaction (SILAR) method. The films were prepared using tin chloride as tin (Sn) source and ammonium sulfide as sulphur (S) source. The structural, optical and morphological study was done using XRD, FESEM, FT-IR and UV-Vis spectrophotometer. XRD measurement confirmed the presence of orthorhombic phase. Particle size estimated from XRD was about 45 nm which fitted well with the FESEM measurement. The value of band gap was about 1.63 eV indicating that SnS can be used as an important material for thin film solar cells. The surface morphology showed a smooth, homogenous film over the substrate. Characteristic stretching vibration mode of SnS was observed in the absorption band of FT-IR spectrum. The electrical activation energy was about 0.306 eV.

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“…* E-mail: arbalu757@gmail.com Sn 2 S 3 has been found to be suitable for preparing heterojunctions applied in photoconductive sensor applications. Sn 2 S 3 films have been prepared by several techniques such as spray pyrolysis [5], plasma-enhanced chemical vapor deposition [6], electro deposition [7], sol-gel dip coating [8], molecular beam epitaxy [9] and SILAR [10]. Among these deposition techniques, spray pyrolysis seems to be one of the most attractive techniques for fabricating thin films due to its simplicity, cheapness and capability to produce large area coatings.…”

Section: Introductionmentioning

confidence: 99%

Optimization of S:Sn precursor molar concentration on the physical properties of spray deposited single phase Sn₂S₃thin films

Srivind¹,

Nagarethinam²,

Balu³

2016

Materials Science-Poland

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Nanoneedle structured Sn 2 S 3 thin films were prepared by spray pyrolysis technique from aqueous solutions of tin (II) chloride and thiourea, keeping the molar concentrations of S:Sn = 0.01:0.01, 0.02:0.02, 0.03:0.03 and 0.04:0.04 in the starting solutions. XRD studies reveal that all the films exhibit orthorhombic crystal structure with a preferential orientation along the [2 1 1] direction. The peak intensity of the (2 1 1) plane is found to be maximum for the film coated with 0.02:0.02 S:Sn molar concentration which confirms the improved crystalline nature of this film. SEM images depict that the film coated with S:Sn molar concentration 0.02:0.02 exhibit needle shaped grains. The optical band gap exhibits red shift from 2.12 eV to 2.02 eV with an increase in S:Sn precursor molar concentration. Electrical studies show that the films having S:Sn molar concentrations 0.01:0.01 and 0.02:0.02 exhibit minimum resistivity values of 0.238 and 0.359 Ω·cm, respectively.

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Fabrication and optical properties of SnS thin films by SILAR method

Cited by 183 publications

References 19 publications

A facile method for the production of SnS thin films from melt reactions

A facile method for the production of SnS thin films from melt reactions

Structural and optical characteristics of SnS thin film prepared by SILAR

Optimization of S:Sn precursor molar concentration on the physical properties of spray deposited single phase Sn₂S₃thin films

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Fabrication and optical properties of SnS thin films by SILAR method

Cited by 183 publications

References 19 publications

A facile method for the production of SnS thin films from melt reactions

A facile method for the production of SnS thin films from melt reactions

Structural and optical characteristics of SnS thin film prepared by SILAR

Optimization of S:Sn precursor molar concentration on the physical properties of spray deposited single phase Sn2S3thin films

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Optimization of S:Sn precursor molar concentration on the physical properties of spray deposited single phase Sn₂S₃thin films