1991
DOI: 10.1143/jjap.30.627
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Fabrication and Operational Stability of Inverted Floating Gate E2PROM (Electrically Erasable Programable Read Only Memory)

Abstract: The inverted floating gate E2PROM was designed and fabricated. In this device, the floating gate is located above the control gate, and the control gate is located between the floating gate and channel. This structure improves the operation stability since it suppresses interpolysilicon oxide current during programming and prohibits channel leakage current during erasing. As a result, the inverted floating gate device exhibits good programming/erasing characteristics and endurance with a threshold voltage shif… Show more

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“…The biggest advantage of using Flash and E2PROM technology is that you can turn off the power at any time without worrying about information loss. At the same time, the storage unit of Flash cancels the E2PROM tunnel type storage unit selector tube, so that when a signal passes, the information covering a certain area can be removed, which is simple and easy to operate [9]. Compared with other technologies, this technology has higher efficiency and better stability.…”
Section: Flash/e2prom Programming Technologymentioning
confidence: 99%
“…The biggest advantage of using Flash and E2PROM technology is that you can turn off the power at any time without worrying about information loss. At the same time, the storage unit of Flash cancels the E2PROM tunnel type storage unit selector tube, so that when a signal passes, the information covering a certain area can be removed, which is simple and easy to operate [9]. Compared with other technologies, this technology has higher efficiency and better stability.…”
Section: Flash/e2prom Programming Technologymentioning
confidence: 99%