Fabrication and Modeling of Flexible High-Performance Resistive Switching Devices With Biomaterial Gelatin/Ultrathin HfOx Hybrid Bilayer

Resistive Switching Behavior Employing the Ipomoea carnea Plant for Biodegradable Rewritable Read-Only Memory Applications

“…Investigation of the read retention property of a memory device provides information about how long the device can retain a particular state (HRS or LRS). , Data retention property of the Au/IC/ITO device was checked by switching the device into the ON state, i.e., LRS, by applying a forward bias of 0 → 2 V and recording the LRS at a read voltage of 0.2 V as shown in Figure d. Observation of Figure d reveals that the device preserved the LRS for 7 × 10 4 sec, reported to be a better retention time for natural biodegradable materials as far as the literature survey is concerned. , Therefore, our experimental observations reveal that the Au/IC/ITO device showed very stable, nonvolatile data retention and endurance properties for a considerable amount of time with negligible degradation in the memory window (∼10 2 order), which is good enough for memory application. , Here, it is important to mention that both endurance and retention properties were checked under positive bias only as under negative bias, the memory window was insignificant, potentially making the device less suitable for memory application with negative bias.…”

“…Investigation of the read retention property of a memory device provides information about how long the device can retain a particular state (HRS or LRS). 61,62 Data retention property of the Au/IC/ITO device was checked by switching the device into the ON state, i.e., LRS, by applying a forward bias of 0 → 2 V and recording the LRS at a read voltage of 0.2 V as shown in Figure 3d. Observation of Figure 3d reveals that the device preserved the LRS for 7 × 10 4 sec, reported to be a better retention time for natural biodegradable materials as far as the literature survey is concerned.…”

Design and synthesis of a solution-processed redox-active bis(formazanate) zinc complex for resistive switching applications

“…1 H NMR (500 MHz, CDCl 3 ): δ 11.85 (s, 1H), 7.49 (t, J = 7.8 Hz, 4H), 7.37 (t, J = 7.8 Hz, 6H), 3.22 (s, 6H), 2.59 (s, 6H) ppm. 13 ). Formazan (46.9 mg, 0.1 mmol) was dissolved in CH 3 OH (15 mL), and the solution was stirred for 15 min before Zn(CH 3 COO) 2 •2H 2 O (9.2 mg, 0.05 mmol) was added, and the solution was refluxed with stirring at 90 °C for 24 h under a nitrogen atmosphere.…”

“…As a result of this method, we have synthesized a bis(4-antipyrinyl) derivative of 3-cyanoformazan, which has been reported previously but has not yet been fully characterized. 41 LH was characterized using 1 H, 13 C{ 1 H}, FT-IR, and UV-vis spectroscopy, and HRMS, and in the formation of bis(formazanate) zinc complex (1) (Scheme 2). Following the removal of the volatiles, [Zn II L 2 ] (1) was obtained in good yield, and its molecular structure was confirmed by single crystal X-ray diffraction, for which suitable crystals were obtained by diffusing the vapors of hexane into the concentrated dichloromethane solution of complex 1.…”

“…12 Moreover, for large-area applications such as for flexible electronics, thin layers of these inorganic metal oxides are used in combination with a soft/organic solutionprocessed material to enhance the large-area applicability and electro-mechanical stability. 13,14 This opens a plethora of opportunities for exploration of solution-processed, organic, or polymer materials to be used in bilayers.…”