2011
DOI: 10.1016/j.jallcom.2011.03.043
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Fabrication and luminescence properties of In2O3-capped ZnS nanowires

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Cited by 12 publications
(4 citation statements)
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“…Si 3 N 4 , SiO 2 , ZrO 2 etc) and high carrier concentration 14 which make them good conductor 15 and apart it has a wide range of other properties such as high optical transparency, 16 chemical stability at elevated temperatures, magnetic properties and excellent luminescence. 17 Due to high electrical conductivity indium oxide is used in electrode material 18,19 (such as in lithium ion battery) and is an important and well known transparent conducting oxide (TCO). Transparent conducting oxides such as indium oxide, tin doped indium oxide and indium zinc oxide (In 2 O 3 -ZnO) films are well known and widely used in microelectronic applications such as liquid crystal displays, solar cells 20 etc.…”
mentioning
confidence: 99%
“…Si 3 N 4 , SiO 2 , ZrO 2 etc) and high carrier concentration 14 which make them good conductor 15 and apart it has a wide range of other properties such as high optical transparency, 16 chemical stability at elevated temperatures, magnetic properties and excellent luminescence. 17 Due to high electrical conductivity indium oxide is used in electrode material 18,19 (such as in lithium ion battery) and is an important and well known transparent conducting oxide (TCO). Transparent conducting oxides such as indium oxide, tin doped indium oxide and indium zinc oxide (In 2 O 3 -ZnO) films are well known and widely used in microelectronic applications such as liquid crystal displays, solar cells 20 etc.…”
mentioning
confidence: 99%
“…Emissions peaks at 354, 376 nm for sample S1, peaks at 390 nm for sample S2 and peaks at 394 nm for sample S3, are band-band PL [54]. Other emissions are due to the different types of defects such as interstitial defects, vacancy defects and dangling bonds [55].…”
Section: Pl Spectroscopymentioning
confidence: 99%
“…Indium oxide (In 2 O 3 ), an important n-type semiconductor, has been extensively studied due to its advantageous features, such as significant large energy band gap (3.5-3.75 eV) [1], high electrical conductivity [2], excellent luminescence [3,4], and high optical transparency [5]. Accordingly, it has a wide range of practical applications, including optoelectronic devices [6], solar cells [7], field effect transistors [8], electric-double-layer transistors [9], Fabry-Perot resonators [10], thin-film transistors [11], bio sensors, and gas sensors.…”
Section: Introductionmentioning
confidence: 99%