Fabrication and lasing characteristics of λ = 1.56 μm tunable twin-guide (TTG) DFB lasers

Schanen, C.; Illek, S.; Lang, Hans Peter; Thulke, W.; Amann, Markus‐Christian

doi:10.1049/ip-j.1990.0014

“…A detailed description of the whole fabrication process can be found in [8,9]. In this paper we mainly focus the attention on the dry etching procedure to define the waveguide.…”

Section: Experiments and Fabrication Technologymentioning

confidence: 99%

Cell-Driven Three-Dimensional Manipulation of Microparts for a Microassembly

Hoshino

¹

,

Higashi

²

,

Konno

³

et al. 2010

Jpn. J. Appl. Phys.

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An InGaAsP/InP buried heterostructure (BH) tunable twin guide (TTG) laser diode with low threshold current, high output efficiency (over 0.25 W A −1 ) and a tuning range around 2.5 nm has been developed. Since BH laser diodes are highly sensitive to the waveguide quality we have improved the dry etching technique for the definition of the ridge in order to enhance the laser performance. Within the developed reactive ion etching (RIE) procedure a CH 4 /H 2 plasma with optimized composition has been used alternating with short O 2 plasma steps to remove remaining hydrocarbon polymer contamination deposited during the CH 4 /H 2 cycles. The first TTG laser diodes fabricated with this process exhibit up to 30% improved output efficiencies as compared to former devices, and show almost no degradation effects during high temperature lifetime stress.

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“…The realization of the TTG laser is based on a four step MOVPE process. A detailed description of the whole fabrication process can be found in [8,9]. In this paper we mainly focus the attention on the dry etching procedure to define the waveguide.…”

Section: Experiments and Fabrication Technologymentioning

confidence: 99%

Tunable twin guide laser diodes with high output efficiency fabricated by an improved reactive ion etching technique

Schmidt¹,

Illek²,

Borchert³

et al. 1998

Semicond. Sci. Technol.

3

0

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An InGaAsP/InP buried heterostructure (BH) tunable twin guide (TTG) laser diode with low threshold current, high output efficiency (over 0.25 W A −1 ) and a tuning range around 2.5 nm has been developed. Since BH laser diodes are highly sensitive to the waveguide quality we have improved the dry etching technique for the definition of the ridge in order to enhance the laser performance. Within the developed reactive ion etching (RIE) procedure a CH 4 /H 2 plasma with optimized composition has been used alternating with short O 2 plasma steps to remove remaining hydrocarbon polymer contamination deposited during the CH 4 /H 2 cycles. The first TTG laser diodes fabricated with this process exhibit up to 30% improved output efficiencies as compared to former devices, and show almost no degradation effects during high temperature lifetime stress.

show abstract