2D materials, with their extraordinary physical and chemical properties, have gained extensive interest for physical, chemical and biological sensing applications. However, 2D material-based devices, such as field effect transistors (FETs) often show high contact resistance and low output signals, which severely affect their sensing performance. In this study, a new strategy is developed to combine metallic and semiconducting polymorphs of transition-metal dichalcogenides (TMDCs) to solve this critical issue. Such a phase engineering methodology to integrate large-scale and spatially assembled multilayers of 2H MoTe 2 FETs with coplanar metallic 1T′ MoTe 2 contacts is applied. Such in-plane heterophase-based FETs exhibit an ohmic contact behavior with an extremely low contact resistance due to the coplanar and seamless connections between 2H and 1T′ phases of MoTe 2 . These 1T′/2H/1T′ based FETs are successfully demonstrated for detecting NH 3 with high current outputs increased up to microamp levels without using any conventional interdigital electrodes, which is compatible with the current CMOS circuits for practical applications. Furthermore, the as-fabricated sensors can detect NH 3 gas concentrations down to 5 ppm at room temperature. This study demonstrates a new strategy of applying the heterophase MoTe 2 -based nanoelectronics for high-performance sensing applications.