Fabrication and enhanced photoelectric properties of a novel Bi₉O_7.5S₆/CdS composite film

Abstract

Layered bismuth oxychalcogenides have been demonstrated as potential candidates for high-speed and low-power electronics due to their outstanding environmental stability and high carrier mobility, but the photoelectric performance of bulk...

Preparation of a novel Bi9O7.5S6/SnS composite film with improved photoelectric properties

“…15 Among these, the formation of composite materials is one of the most common means to improve the photoelectric properties. For example, a type-II heterojunction has been newly proposed in nitrogen-doped carbon-coupled Bi 9 O 7.5 S 6 nanosheets with highly selective visible-light-driven photocatalytic CO 2 reduction ability; 16,17 improved photoelectric properties and photochemical stability have been achieved in a Bi 9 O 7.5 S 6 /CdS composite film with a type-II heterojunction. 17 In comparison with CdS, tin sulfide (SnS) exhibits good environmental stability and has garnered significant interest in recent years due to its high absorption coefficient, suitable bandgap (1.2–1.5 eV), 18 and environmentally friendly characteristics.…”

“…For example, a type-II heterojunction has been newly proposed in nitrogen-doped carbon-coupled Bi 9 O 7.5 S 6 nanosheets with highly selective visible-light-driven photocatalytic CO 2 reduction ability; 16,17 improved photoelectric properties and photochemical stability have been achieved in a Bi 9 O 7.5 S 6 /CdS composite film with a type-II heterojunction. 17 In comparison with CdS, tin sulfide (SnS) exhibits good environmental stability and has garnered significant interest in recent years due to its high absorption coefficient, suitable bandgap (1.2–1.5 eV), 18 and environmentally friendly characteristics. 19 Commonly, type-II heterojunctions can facilitate the transfer of photo-generated charge carriers between semiconductors, resulting in enhanced photovoltaic conversion efficiency.…”