Fabrication and electrical characterizations of graphene nanocomposite thin film based heterojunction diode

Rahim, Ishrat; Shah, Masaud; Iqbal, Mahmood; Wahab, Fazal; Khan, Afzal; Khan, Suleman

doi:10.1016/j.physb.2017.07.073

Cited by 15 publications

(7 citation statements)

References 50 publications

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“…The abundant smooth wrinkles that appeared on the film were probably because of the overlapping edges of the RGO nanosheets. These wrinkles appear as raised bridges, which are very favorable for electron transmission …”

Section: Resultsmentioning

confidence: 99%

Fabrication and electrochemical properties of flexible transparent supercapacitor electrode materials based on cellulose nanofibrils and reduced graphene oxide

et al. 2019

Polymer Composites

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In this research, flexible transparent supercapacitor electrode materials were fabricated using cellulose nanofibrils (CNFs) and reduced graphene oxide (RGO) via a layer‐by‐layer (LbL) self‐assembly method. First, a transparent film was obtained by vacuum filtration of a CNF suspension, which was isolated from bamboo materials using a combination of 2,2,6,6‐tetramethylpiperidin‐1‐oxyl radical catalytic oxidation and ultrasonic treatment. Subsequently, graphene oxide (GO) was deposited on the surface of the CNF film using Cu2+ as a cross‐linking agent via the LbL self‐assembly technique and then was reduced by L‐ascorbic acid under mild reaction conditions. The degree of reduction of the GO on the CNF film surface was investigated by X‐ray photoelectron spectroscopy (XPS), Raman spectroscopy (Raman), and Fourier transform infrared spectroscopy (FT‐IR); concurrently, the effect of the number of self‐assembly times on the transparency, mechanical properties, and conductivity was also evaluated. The XPS, Raman, and FT‐IR spectral analyses proved that the CNFs/GO composite films were successfully reduced to CNFs/RGO composite films, of which the transparency and mechanical properties decreased with the increase in the number of self‐assembly times, while the conductivity remarkably raised. Based on the analysis of the results, the CNFs/RGO composite film obtained after 18 self‐assembly cycles exhibited excellent transparency, good tensile strength, and a high conductivity. Therefore, the CNFs/RGO composite film was selected to fabricate a supercapacitor electrode material, and the obtained supercapacitor displayed excellent electrochemical properties, in which the areal specific capacitance was 2.25 mF cm−2 at a current density of 0.01 mA cm−2 and the capacitance retention reached 97.3% after 1500 cycles. The presented strategy provides a good reference for the development of transparent and portable energy storage devices.

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Section: Resultsmentioning

confidence: 99%

Fabrication and electrochemical properties of flexible transparent supercapacitor electrode materials based on cellulose nanofibrils and reduced graphene oxide

et al. 2019

Polymer Composites

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“…This shows that in region II, where current conduction occurs through the interface rather than from bulk material, the Schottky emission is the predominant current conduction mechanism. This is caused by the dielectric layer used here, which has an irregular and subatomic structure [37][38][39][40].…”

Section: Fig 5 Plot Of Dv/dln (I) and H (I) Versus I For The Mo/hfo2/...mentioning

confidence: 99%

Microstructural and Current-voltage Characteristics in Mo/HfO2/n‑Si Based Metal-Insulator-Semiconductor (MIS) Diode using Different Methods for Optoelectronic Device Applications

et al. 2024

IJFMR

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This paper investigates the effect of hafnium dioxide (HfO2) thin film as interlayer between the Mo and n-Si semiconductor on the electrical characteristics of the Mo/n-Si Schottky diode (SD). The X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) results confirmed that HfO2 films were formed on the n-Si semiconductors. The image from SEM and AFM displays that the deposited HfO2 thin film had a uniform appearance good smoothness of the surface. The smooth surfaces of the insulating layer strongly influence the electrical properties of the diode. The electrical properties of the Mo/HfO2/n-Si metal/insulator/semiconductor (MIS) diode were obtained via current-voltage (I-V) measurements in the voltage range from −3 V to +3 V at room temperature. A better rectifying ability and a reduced reverse leakage current were demonstrated by the MIS diode. The MIS dide's barrier height (Bh) and ideality factor value were calculated to be 0.85 eV and 1.21, respectively. The MIS diode was able to achieve a higher b, which allowed the HfO2 interlayer to change BH. The calculated BH values from the I-V, Hernandez, Cheung, and Norde approaches were comparable to one another, demonstrating their validity and consistency. The MIS diode's forward bias log (I) - log (V) curve demonstrated that it was ohmic in low-voltage regimes and that conduction was space-charge-limited in high-voltage regimes. However, for the MIS diode, the Poole-Frenkel and Schottky emissions are the dominant current conduction mechanisms in the lower and higher bias regions. These outcomes indicate that the HfO2 film can be chosen as dielectric materials in the construction of MIS devices.

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Section: Trending Topics In Sustainable Flexible Electronicsmentioning

confidence: 99%

“…In most studies, a particular emphasis has been placed on the implementation of semiconductor materials on flexible substrates. These devices are categorized under the scope of diodes, [304,305] transistors, [306] and photodetectors. [307][308][309] Other than the aforementioned optoelectronic devices, sustainable materials have the potential to be utilized in different photonic applications.…”

Section: Trending Topics In Sustainable Flexible Electronicsmentioning

confidence: 99%

Sustainable Macromolecular Materials in Flexible Electronics

Kılıçarslan

Bozyel

Gökcen

et al. 2022

Macro Materials & Eng

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With advances in electronics, the concept of flexible electronics has left traditional designs behind. Many concepts, such as sensors, transistors, soft robotics, data, and energy storage devices have begun to find more widespread and flexible areas of use. From this point of view, using environmentally friendly, abundant, and renewable natural materials that reduce carbon emissions in the production and disposal of these components is the first step toward the concept of sustainable flexible electronics. This review deals with the integration of sustainable natural materials obtained from plant, animal, and bacterial sources into sensors, displays, data storage, power generation, and soft robotic systems, with appropriate examples compiled from the last ten years. In addition, limitations in the use of sustainable materials as flexible electronic components and their potential for use in innovative electronic applications in the future are foreseen.

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Fabrication and electrical characterizations of graphene nanocomposite thin film based heterojunction diode

Cited by 15 publications

References 50 publications

Fabrication and electrochemical properties of flexible transparent supercapacitor electrode materials based on cellulose nanofibrils and reduced graphene oxide

Fabrication and electrochemical properties of flexible transparent supercapacitor electrode materials based on cellulose nanofibrils and reduced graphene oxide

Microstructural and Current-voltage Characteristics in Mo/HfO2/n‑Si Based Metal-Insulator-Semiconductor (MIS) Diode using Different Methods for Optoelectronic Device Applications

Sustainable Macromolecular Materials in Flexible Electronics

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