Fabrication and electrical characterization of nanocrystalline ZnO/Si heterojunctions

Zhang, Yang; Xu, Jie; Lin, Bing; Fu, Zhaoming; Zhong, Sheng; Liu, Cihui; Zhang, Ziyu

doi:10.1016/j.apsusc.2005.04.053

Cited by 38 publications

(21 citation statements)

References 18 publications

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“…5(b)), is consistent with standard one, largely reported in many works [32,33] and it reflects the presence of surface channel current component [34]. This transport current is generally well expected in porous silicon-based structures, since the rapid expected-oxidation during structure growth [35][36][37][38][39].…”

Section: Current-voltage Characteristics Of Izo/ps/si and Izo/zno/ps/supporting

confidence: 87%

Modifications in electrical properties of ZnO:In/PS/Si (100) heterojunction by ZnO intermediate layer

et al. 2015

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International audienceNous utilisons une méthode sol-gel pour synthétiser des nano-poudres d’aérogel d’oxyde de zinc dopées à l’indium (IZO). Les produits obtenus sont utilisés dans la cible comme source pour le dépôt par pulvérisation rf cathodique de minces films de IZO sur des substrats de silicium poreux (PS) de type p. Nous déposons deux hétéro-structures avec, et sans couche intermédiaire ZnO, (IZO/ZnO/PS/Si) et (IZO)/PS/Si), de façon à étudier son rôle sur les propriétés électriques. Les films minces de IZO, d’épaisseur d’environ 400 nm et concentration d’indium de 4 %, sont poly-cristallins avec une structure wurtzite hexagonale et une orientation préférentielle dans la direction cristalline (002). Nous analysons systématiquement l’effet de la couche intermédiaire ZnO sur les propriétés des deux hétérojonctions, n-IZO/PS/p-Si et n-IZO/ZnO/PS/p-Si, en étudiant les caractéristiques courant–voltage (I–V), capacitance–voltage (C–V) et capacitance–fréquence (C–F). Nos mesures montrent que les propriétés de la jonction dépendent fortement de la température et que la couche intermédiaire ZnO a un impact significatif sur les propriétés de transport de l’hétéro-structure n-IZO/ZnO/PS/p-Si. La jonction fabriquée sans ZnO possède des propriétés rectificatrices idéales (IF/IR = 32 à 300 K et 6 × 103 à 80 K pour ±3 V). Par contre les propriétés rectificatrices se dégradent pour n-IZO/ZnO/PS/p-Si (IF/IR ∼ 8 à 300 K et 7 à 80 K pour ±3 V). Le comportement ambigu de IF/IR aux basses températures (80–140 K) pour n-IZO/ZnO/PS/p-Si s’explique par l’existence de trajectoires tunnels actives dans ce domaine de température. Les propriétés de transport des deux diodes s’expliquent à l’aide du modèle d’Anderson et du modèle de courant limité par charges d’espace. Les mesures C–V montrent un comportement électrique complexe des jonctions IZO/ZnO/PS/Si, attribué à la diffusion d’indium dans la couche intermédiaire de ZnO non dopée pendant le processus de croissance. [Traduit par la Rédaction

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Section: Current-voltage Characteristics Of Izo/ps/si and Izo/zno/ps/supporting

confidence: 87%

Modifications in electrical properties of ZnO:In/PS/Si (100) heterojunction by ZnO intermediate layer

et al. 2015

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“…The breakdown was observed at À38.6 V, higher than all published results for n-ZnO/p-Si heterojunctions. [20][21][22][23][24] The reverse saturation current is 5.58 Â 10 À7 A, which is between the reported values 2 Â 10 À5 A and 0.17 Â 10 À9 A. 7,8 Under forward bias voltages, the dark current increases exponentially following the equation, I $ exp(aV), which is usually observed in the wide band gap p-n diodes due to a recombination-tunneling mechanism.…”

mentioning

confidence: 52%

Heterojunction photodiode fabricated from hydrogen treated ZnO nanowires grown on p-silicon substrate

Shao

Lian

et al. 2012

Applied Physics Letters

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A heterojunction photodiode was fabricated from ZnO nanowires (NWs) grown on a p-type Si (100) substrate using a hydrothermal method. Post growth hydrogen treatment was used to improve the conductivity of the ZnO NWs. The heterojunction photodiode showed diode characteristics with low reverse saturation current (5.58 Â 10 À7 A), relatively fast transient response, and high responsivity (22 A/W at 363 nm). Experiments show that the photoresponsivity of the photodiode is dependent on the polarity of the voltages. The photoresponsivity of the device was discussed in terms of the band diagrams of the heterojunction and the carrier diffusion process. Semiconductor nanowires (NWs) have garnered extensive research interests due to their unique optical and electrical properties. 1,2 In particular, ZnO NWs are promising for optoelectronic applications including ultraviolet (UV) lightemitting diodes (LED), UV laser diodes, and UV photodetectors for their wide band gap (3.37 eV), large exciton binding energy 60 meV, and high photoconductive gain. [3][4][5] The development of a ZnO pn junction has been limited by the difficulty of growing p-type ZnO. However, heterojunctions with ZnO NWs have been developed with p-type substrates including silicon. [6][7][8][9] The traditional bottom up approach is often employed which causes poor conductivity and high density of surface defects. Post growth hydrogen treatment is a simple and efficient method for the conductivity enhancement, which is intensively investigated both theoretically and experimentally. [10][11][12][13][14] The conductivity of ZnO could be enhanced by up to three orders of magnitude without significant changes in the structure and crystal orientation of the wurtzite type ZnO nanostructures. 12 The conductivity enhancement could be attributed to the introduction of shallow donor states such as the VO-H complex and the hydrogen interstitial. 15,16 Also, the passivation effect on the defects could reduce carrier scattering centers and hence has the potential to increase the electron mobility. 17 In this study, heterojunction photodiode was fabricated based on highly vertically aligned hydrogen treated ZnO NWs grown on top of p-Si substrate through hydrothermal method. A similar growth method has been reported by Ghosh and Basak for quasialigned ZnO NWs/p-Si heterojunction photodiode. 8 The heterojunction photodiode in this work shows a low reverse saturation current and relatively fast time response. The photoresponsivity spectra of the device in the UV and visible regions depend on the polarity of the applied voltages, which is explained in terms of energy band structure and carriers transportation mechanism inside the heterojunction structure.All chemical reagents were purchased from SigmaAldrich and used without further purification. Ammonium hydroxide (28 wt. %) was added dropwise into 0.1M zinc chloride solution until the pH is 10-11 and the solution was clear. Subsequently, the transparent solution was transferred to a Teflon-lined autoclave (Parr, USA) and th...

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“…Among the wide bandgap semiconductor materials, zinc oxide (ZnO), an inherent n-type semiconductor, has attracted a great deal of interest for next-generation electronic and optoelectronic devices including photovoltaics, light-emitting diodes and photodetectors [26][27][28][29][30][31][32][33][34]. ZnO exhibits excellent electrical and optical properties and high chemical stability [35].…”

Section: Introductionmentioning

confidence: 99%

Photovoltaic performance of Gallium-doped ZnO thin film/Si nanowires heterojunction diodes

Akgül

Ünalan

et al. 2016

Philosophical Magazine

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Fabrication and electrical characterization of nanocrystalline ZnO/Si heterojunctions

Cited by 38 publications

References 18 publications

Modifications in electrical properties of ZnO:In/PS/Si (100) heterojunction by ZnO intermediate layer

Modifications in electrical properties of ZnO:In/PS/Si (100) heterojunction by ZnO intermediate layer

Heterojunction photodiode fabricated from hydrogen treated ZnO nanowires grown on p-silicon substrate

Photovoltaic performance of Gallium-doped ZnO thin film/Si nanowires heterojunction diodes

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