Fabrication and characterization of Zinc Telluride (ZnTe) thin films grown on glass substrates

An investigation on structural and optical properties of nanocolumnar ZnTe thin films grown by glancing angle technique

“…Similar results have been observed for other materials [27,29,47]. The direct bandgap energy values are close to the reported values for ZnTe thin films [48][49][50] . Based on the transmission spectra, the refractive index (n) has been calculated using the Swanepoel method, because it is a determinative factor in the efficiency of an antireflection coating [6,20].…”

“…This decrement has been attributed to the increase of the density of inclined samples than that of not only the bulk materials but also their thin films [50]. The Refractive index values are close to the reported values for ZnTe thin films [49,51] .…”

“…As a result, it has been found applicable in optoelectronic and microelectronic devices such as detectors [10], thin film transistors [2], x-ray imaging system [10,11], etc. Several methods have been proposed and applied in the deposition of ZnTe thin films: RF Sputtering [12], electrodeposition [3,13], thermal evaporation [2,14], molecular beam epitaxy (MBE) [15,16], electron beam evaporation [6], pulsed laser deposition (PLD) [4,17], hot-wall evaporation [18]. Among them, physical vapor deposition is found to be more applicable for ZnTe and other II-VI compounds [19][20][21][22][23][24][25][26].…”

An overview on the role of ZnTe as an efficient interface in CdTe thin film solar cells: a review

“…113 The thermal evaporation technique was used to grow films with a thickness of 85 nm, 300 nm, 600 nm, and 900 nm on silicon and glass substrates 114–117 and thickness of 200 nm, 400 nm, 600 nm, and 1000 nm at the growth temperature 300 °C for optoelectronic applications. 118 Indium-doped ZnTe films were fabricated on glass substrates at vacuum of 10 −5 Torr and the findings demonstrated the enhanced conductivity of the doped films. 119 ZnTe- and Ga-doped ZnTe thin films were fabricated on glass and Te-doped GaSb substrates at vacuum of 10 −5 mbar.…”

Thickness Effect on Some Physical Properties of RF Sputtered ZnTe Thin Films for Potential Photovoltaic Applications

“…It is a precious material from an ecological point of view; it can be used as a replacement for the CdS window layer [ 15 ]; the “condition” is that the conductivity is n-type. For the deposition of thin layers [ 16 , 17 , 18 , 19 , 20 ], more physical and chemical growth paths are known, such as molecular beam epitaxy (MBE) [ 21 ], chemical bath deposition (CBD), electron-beam evaporation, thermal evaporation, magnetron sputtering [ 12 ], and electrodeposition [ 19 , 20 , 21 , 22 ]. The ZnTe thin layer properties depend directly on the deposition method, deposition conditions, and the growth direction imposed by the substrate when the substrate is crystalline [ 5 , 6 , 7 , 8 , 23 ].…”