Fabrication and Characterization of UV Photodetectors with Cu-Doped ZnO Nanorod Arrays

Abstract

In this study, metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors (PDs) based on Cu-doped ZnO (CZO) nanorods (NRs) were fabricated and investigated. The CZO NRs were prepared on a Corning glass substrate by the chemical bath deposition (CBD) method with photolithography processes. It was found that the diameter and length of ZnO NRs increased with Cu-doped concentration. The X-ray diffraction (XRD) analysis showed that the growth of NR arrays along the c-axis was hexagonal wurtzite crystal. Compared with pure ZnO NRs, it can be seen that the main UV peak (378 nm) of photoluminescence (PL) spectra showed a blue-shift phenomenon with the increase of Cu-doped concentration. Additionally, it was found that the rise and recovery time of such a fabricated PD were shortened under the UV illumination. The UV sensing properties of the CZO PDs were improved since the trapping and de-trapping of electrons by Cu-related complexes were faster than the adsorption and desorption of oxygen molecules. With a 3 V applied bias and 380 nm UV illumination, the optimal sensitivity of our PDs is 196.6.

Characteristics of Field Emitters on the Basis of Pd-Adsorbed ZnO Nanostructures by Photochemical Method

“…(2) ZnO is an n-type II–VI semiconductor and possesses chemical and thermal stability and a high saturated carrier drift rate. (3) The ZnO material with a hexagonal wurtzite structure reveals nontoxicity, is cheap, and has a simple design. − Owing to its remarkable property, ZnO has become the popular research material in the modern day. The ZnO morphologies with different geometrical nanostructures have been studied using different methods, for instance, hydrothermal method (HM), pulsed laser deposition, furnace, and electrochemical deposition. − Among these preparation processes, HM has several merits, such as simple and controllable process, high yield, uniform morphology feature, and homogeneous size; the nanostructure is easily synthesized at low temperature.…”

Visible photodetector based on transition metal-doped ZnO NRs/PEDOT:PSS hybrid materials

“…The length of nanorods was around 2 μm. Due to the high surface-to-volume ratio, this structure not only increased the surface area for absorbing light but also reduced the scattering of light, 39 leading to the enhancement of the hybrid device's performance.…”

Characteristics of Metal–Semiconductor–Metal Ultraviolet Photodetectors Based on Pure ZnO/Amorphous IGZO Thin-Film Structures

“…In recent years, ultraviolet (UV) photodetectors (PDs) have played an important role in human health, ozone layer monitoring, and flame detection [1,2]. Zinc oxide (ZnO) is a novel metal oxide semiconductor material that is used as an integral part of UV PDs [3,4]. ZnO is an n-type and II-VI material; its bandgap is approximately 3.37 eV, and its excitation binding energy is 60 meV at room temperature [5,6].…”