Fabrication and characterization of transparent conductive ZnO:Al thin films prepared by direct current magnetron sputtering with highly conductive ZnO(ZnAl2O4) ceramic target

Influence of argon gas pressure on the ZnO:Al films deposited on flexible TPT substrates at room temperature by magnetron sputtering

“…As the pressure increasing, the absorption edge of the ZAO films is shifted to the shorter wavelength. It is attributed to the Burstein-Moss effect [13] , which results from the Pauli Exclusion Principle. That is the blue shift of the absorption edge with increasing carrier concentration.…”

“…Among of these ZnO-based TCO films, aluminum doped zinc oxide (ZnO︰Al) films is one of the most promising TCO materials because of high transparent, low resistivity, non-toxicity and abundant raw materials and so on. ZnO︰Al (ZAO) films prepared on glass substrates have been extensively studied due to their good performances [5][6][7][8] . But it is important to investigate the properties of ZAO deposited on flexible substrates for many applications, such as flexible displays and organic solar cells etc.…”

Properties of Dy-doped ZnO nanocrystalline thin films prepared by pulsed laser deposition

“…Impurity-doped ZnO thin films have been prepared by various techniques such as thermal evaporation [14], magnetron sputtering [15,16], spray pyrolysis [17,18], chemical vapor deposition (CVD) [19][20][21], pulsed laser deposition [22][23][24], molecular beam epitaxy [25] and sol-gel processing [26,[27][28][29]30]. Pulsed laser deposition has advantages in target fabrication and keeping the composition of films coinciding with the target.…”

Influence of Al concentration and annealing temperature on structural, optical, and electrical properties of Al co-doped ZnO thin films

“…7. The E g values of the films that have 5.09 at.% of Al or less do not vary much with respect to room temperature [38]. It was already reported that vacuum is another effective parameter in improving the carrier concentrations, grain size and mobility of AZO films and that annealing can result in increase of band gap energy [39,40].…”